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N01L083WC2AT2-55I PDF预览

N01L083WC2AT2-55I

更新时间: 2024-01-02 19:15:00
品牌 Logo 应用领域
NANOAMP 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 233K
描述
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32

N01L083WC2AT2-55I 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:GREEN, TSOP1-32Reach Compliance Code:unknown
风险等级:5.78最长访问时间:55 ns
JESD-30 代码:R-PDSO-G32长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.25 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

N01L083WC2AT2-55I 数据手册

 浏览型号N01L083WC2AT2-55I的Datasheet PDF文件第1页浏览型号N01L083WC2AT2-55I的Datasheet PDF文件第2页浏览型号N01L083WC2AT2-55I的Datasheet PDF文件第3页浏览型号N01L083WC2AT2-55I的Datasheet PDF文件第5页浏览型号N01L083WC2AT2-55I的Datasheet PDF文件第6页浏览型号N01L083WC2AT2-55I的Datasheet PDF文件第7页 
NanoAmp Solutions, Inc.  
Power Savings with Page Mode Operation (WE = V )  
N01L083WC2A  
IH  
Page Address (A4 - A16)  
Word Address (A0 - A3)  
Open page  
...  
Word 16  
Word 1  
Word 2  
CE1  
CE2  
OE  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
(DOC# 14-02-008 REV H ECN# 01-1283)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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