Datasheet > MZT2955

MZT2955

更新时间： 2024-01-03 04:06:08

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描述
SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

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数据手册

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MZT2955 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR EPITAXIAL TRANSISTORS

MZT2955 PNP

MZT3055 NPN

SOT-223

Formed SMD Package

With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator

Applications

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

UNIT

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current Continuous

5.0

I_B

6.0

8.0

Base Current

Power Dissipation upto T_c=25ºC

P_D

2.0

Derate above 25ºC

Power Dissipation upto T_a=25ºC

mW/ºC

P_D

Derate above 25ºC

Junction Temperature

mW/ºC

T_j

150

ºC

T_stg

- 55 to +150

Storage Temperature

THERMAL RESISTANCE

Junction to Case

R_{th (j-c)}

R_{th (j-a)}

15.6

62.5

ºC/W

Junction to Ambient in free air

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL

V_CEO

TEST CONDITION

MIN

MAX

UNIT

I_C=1mA, I_B=0

Collector Emitter Voltage

Collector Cut Off Current

I_CEX

V_CE=70V, V_{EB (off)}=1.5V

V_CE=70V, V_{EB (off)}=1.5V, T_C=150ºC

V_CB=70V, I_E=0

1.0

5.0

1.0

I_CBO

Collector Cut Off Current

V_CB=70V, I_E=0, T_C=150ºC

V_CE=30V, I_B=0

I_CEO

I_EBO

*h_FE

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

0.7

V_EB=5V, I_C=0

5.0

I_C=4A, V_CE=4V

I_C=10A, V_CE=4V

100

*V_{CE (sat)}

I_C=4A, I_B=400mA

I_C=10A, I_B=3.3A

Collector Emitter Saturation Voltage

1.1

8.0

1.8

*V_BE(on)

f_T

I_C=4A, V_CE=4V

Base Emitter On Voltage

Transition Frequency

I_C=0.5A, V_CE=10V, f=500KHz

MHz

*Pulse Test : Pulse width < 300ms, Duty Cycle < 2%

MZT2955_MZT3055Rev061104E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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