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MX5KP13AE3 PDF预览

MX5KP13AE3

更新时间: 2024-01-06 12:40:18
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 354K
描述
Trans Voltage Suppressor Diode, 5000W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AR, ROHS COMPLIANT, PLASTIC, 5A, 2 PIN

MX5KP13AE3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.36Is Samacsys:N
最大击穿电压:15.9 V最小击穿电压:14.4 V
击穿电压标称值:15.15 V外壳连接:ISOLATED
最大钳位电压:21.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ARJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:5000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:1.56 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:13 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

MX5KP13AE3 数据手册

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5000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, PLASTIC, CASE 5A, 2 PIN