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MX27C2048TC-70

更新时间： 2024-02-11 07:41:49

品牌	Logo	应用领域
旺宏电子 - Macronix		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
18页	766K
描述
2M-BIT [256Kx8/128x16] CMOS EPROM

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MX27C2048TC-70 数据手册

MX27C2100/27C2048

BYTE-WIDE MODE

The location of the capacitor should be close to where

the power supply is connected to the array.

With BYTE/VPP at GND ±0.2V, outputs Q8-15 are tri-

stated. IfQ15/A-1=VIH, outputsQ0-7presentdatabits

Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits

Q0-7.

STANDBY MODE

The MX27C2100/2048 has a CMOS standby mode

which reduces the maximum VCC current to 100 uA. It

is placed in CMOS standby when CE is at VCC ±0.3 V.

The MX27C2100/2048 also has a TTL-standby mode

which reduces the maximum VCC current to 1.5 mA. It

is placed in TTL-standby when CE is at VIH. When in

standby mode, the outputs are in a high-impedance

state, independent of the OE input.

TWO-LINE OUTPUT CONTROL FUNCTION

To accommodate multiple memory connections, a two-

line control function is provided to allow for:

1. Low memory power dissipation,

2. Assurance that output bus contention will not

occur.

It is recommended that CE be decoded and used as the

primary device-selecting function, while OE be made a

common connection to all devices in the array and

connectedtotheREADlinefromthesystemcontrolbus.

This assures that all deselected memory devices are in

their low-power standby mode and that the output pins

are only active when data is desired from a particular

memory device.

SYSTEM CONSIDERATIONS

During the switch between active and standby

conditions, transient current peaks are produced on the

rising and falling edges of Chip Enable. The magnitude

of these transient current peaks is dependent on the

outputcapacitanceloadingofthedevice. Ataminimum,

a0.1uFceramiccapacitor(highfrequency,lowinherent

inductance) should be used on each device between

Vcc and GND to minimize transient effects. In addition,

to overcome the voltage drop caused by the inductive

effects of the printed circuit board traces on EPROM

arrays, a 4.7 uF bulk electrolytic capacitor should be

used between VCC and GND for each eight devices.

P/N: PM0158

REV. 4.3, AUG. 22, 2001

1 2 345 6 7...18

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