Datasheet > MVGSF1N02LT1G

MVGSF1N02LT1G

更新时间： 2024-02-10 00:27:32

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安森美 - ONSEMI		/
页数	文件大小	规格书
4页	160K
描述
Power MOSFET

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MVGSF1N02LT1G 数据手册

MGSF1N02L, MVGSF1N02L

TYPICAL ELECTRICAL CHARACTERISTICS

0.14

0.2

0.18

0.16

0.14

0.12

0.1

150°C

0.13

150°C

0.12

= 4.5 V

= 10 V

0.11

0.1

0.09

0.08

0.07

0.06

0.05

0.04

25°C

-55°C

0.08

0.06

0.04

0.1 0.2 0.3

0.4 0.5

0.6 0.7

0.8 0.9

0.2

0.4 0.6

0.8

1.2 1.4 1.6 1.8

I , DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

Figure 3. On−Resistance versus Drain Current

1.6

1.5

1.4

1.3

1.2

1.1

= 16 V

= 10 V

= 2 A

T = 25°C

= 4.5 V

= 1 A

0.9

0.8

0.7

0.6

= 2.0 A

3000

-ꢀ55

-5

145

1000

2000

4000

5000

6000

T , JUNCTION TEMPERATURE (°C)

Q , TOTAL GATE CHARGE (pC)

Figure 6. Gate Charge

Figure 5. On−Resistance Variation with Temperature

1000

100

= 0 V

f = 1 MHz

T = 25°C

T = 150°C

25°C

-55°C

0.1

iss

oss

0.01

rss

0.001

V , DRAIN-TO-SOURCE VOLTAGE (Volts)

0.2

0.4

0.6

0.8

, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

Figure 8. Capacitance

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