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MURT10010 PDF预览

MURT10010

更新时间: 2024-01-21 19:52:51
品牌 Logo 应用领域
GENESIC 超快速恢复二极管局域网
页数 文件大小 规格书
3页 749K
描述
Silicon Super Fast Recovery Diode

MURT10010 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PUFM-X3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
应用:SUPER FAST RECOVERY外壳连接:ISOLATED
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PUFM-X3最大非重复峰值正向电流:1500 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:100 V
最大反向电流:25 µA最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

MURT10010 数据手册

 浏览型号MURT10010的Datasheet PDF文件第2页浏览型号MURT10010的Datasheet PDF文件第3页 
MURT10005 thru MURT10020R  
VRRM = 50 V - 200 V  
IF(AV) = 100 A  
Silicon Super Fast  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 50 V to 200 V VRRM  
• Isolation Type Package  
• Electrically Isolated base plate  
• Not ESD Sensitive  
Three Tower Package  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MURT10020(R)  
Parameter  
Symbol  
MURT10005(R)  
MURT10010(R)  
Unit  
VRRM  
200  
Repetitive peak reverse voltage  
50  
100  
V
VRMS  
VDC  
Tj  
141  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
35  
71  
V
V
200  
50  
100  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 140 °C  
MURT10020(R)  
Parameter  
Symbol  
IF(AV)  
IFSM  
MURT10005(R)  
MURT10010(R)  
Unit  
A
Average forward current (per  
pkg)  
100  
100  
100  
Peak forward surge current (per  
leg)  
tp = 8.3 ms, half sine  
1500  
1500  
1500  
A
Maximum instantaneous  
forward voltage (per leg)  
VF  
IFM = 50 A, Tj = 25 °C  
1.0  
V
1.0  
1.0  
Maximum instantaneous  
reverse current at rated DC  
blocking voltage (per leg)  
Tj = 25 °C  
25  
1
25  
1
25  
1
μA  
IR  
Tj = 125 °C  
mA  
IF=0.5 A, IR=1.0 A,  
IRR= 0.25 A  
Maximum reverse recovery  
time (per leg)  
Trr  
75  
75  
75  
nS  
Thermal characteristics  
Thermal resistance, junction -  
case (per leg)  
RΘJC  
1.0  
1.0  
1.0  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/murt10005.pdf  

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