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MURS460BF PDF预览

MURS460BF

更新时间: 2024-10-01 15:18:47
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 216K
描述
SMBF

MURS460BF 数据手册

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RoHS  
MURS460BF  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Super Fast reverse recovery time  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
Mechanical Data  
ackage: SMBF  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
MURS460BF  
PARAMETER  
SYMBOL  
UNIT  
MURS460BF  
Device marking code  
V
V
V
V
600  
420  
600  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
RMS  
V
Maximum DC blocking Voltage  
DC  
Average rectified output current  
I
A
4.0  
O
@60Hz half-sine wave, resistance load, TC (Fig.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25  
Forward Surge Current (Non-repetitive)  
100  
IFSM  
A
200  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t≤8.3ms Tj=25Rating of per diode  
Typical junction capacitance  
@Measured at 1MHz and Applied Reverse Voltage of  
4.0 V.D.C  
A2s  
pF  
I2t  
Cj  
41.5  
50  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
MURS460BF  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
FM  
=4.0A  
V
1.25  
50  
5
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
trr  
ns  
T =25℃  
j
Maximum DC reverse current at  
rated DC blocking voltage per diode  
I
μA  
R
50  
T =125℃  
j
1 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S3816  
Rev. 1.1,18-Oct-21  
www.21yangjie.com  

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