MUR860L
■Electrical Characteristics
Min
Typ
Max
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
I
I
=8.0A @Tj=25℃
=8.0A @Tj=150℃
-
-
2.15
-
3.0
FM
FM
VFM
Instantaneous forward voltage drop per diode
V
2.0
5.0
VRM=VRRM
Tj=25℃
VRM=VRRM
Tj=150℃
IRRM1
IRRM2
-
-
-
-
-
-
-
-
-
-
DC reverse current at
rated DC blocking voltage per diode
uA
ns
25
17
40
200
IF=0.5A IRM=1A
IRR=0.25A Tj=25℃
25
-
Reverse Recovery Time
Trr
Tj=25℃
95
-
Tj=125℃
1.9
3.8
40
-
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
IF=8A
di/dt=-200A/us
VRM=200V
Peak recovery current
IRRM
A
-
-
Reverse recovery charge
Qrr
nC
185
-
Thermal Characteristics (T =25℃Unless otherwise specified)
■
j
MUR860L
PARAMETER
Between junction and case
Between junction and Air
SYMBOL
UNIT
℃/W
℃/W
R
θJ-C
Thermal Resistance
Thermal Resistance
2.0
50
R
θJ-A
Ordering Information (Example)
■
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
UNIT WEIGHT(g)
DELIVERY MODE
Approximate 1.8
50
1000
5000
Tube
MUR860L
Characteristics (Typical)
■
FIG2:Surge Forward Current Capability
FIG1:Io -Tc Curve
14.0
12.0
10.0
70
60
50
8.3ms Single
Half Sine-Wave
JEDEC Method
8.0
6.0
4.0
2.0
40
30
20
TC measure point
10
0
1
2
5
10
20
50
100
150
Case Temperature(℃)
150
100
50
0
Number of Cycles
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B1984
Rev.1.3,28-Oct-22
www.21yangjie.com