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MUR40060CTR PDF预览

MUR40060CTR

更新时间: 2024-10-01 01:10:07
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3页 693K
描述
Silicon Super Fast Recovery Diode

MUR40060CTR 数据手册

 浏览型号MUR40060CTR的Datasheet PDF文件第2页浏览型号MUR40060CTR的Datasheet PDF文件第3页 
MUR40040CT thru MUR40060CTR  
VRRM = 400 V - 600 V  
IF(AV) = 400 A  
Silicon Super Fast  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 400 to 600 V VRRM  
• Not ESD Sensitive  
Twin Tower Package  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MUR40060CT(R)  
Parameter  
Symbol  
MUR40040CT(R)  
Unit  
VRRM  
600  
Repetitive peak reverse voltage  
400  
V
VRMS  
VDC  
Tj  
420  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
280  
V
V
600  
400  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 125 °C  
MUR40060CT(R)  
Parameter  
Symbol  
IF(AV)  
IFSM  
MUR40040CT(R)  
Unit  
A
400  
Average forward current (per pkg)  
400  
Peak forward surge current (per  
leg)  
tp = 8.3 ms, half sine  
3300  
3300  
A
Maximum instantaneous forward  
voltage (per leg)  
VF  
IFM = 200 A, Tj = 25 °C  
1.7  
V
1.3  
Tj = 25 °C  
Tj = 125 °C  
25  
3
25  
3
μA  
Maximum reverse current at rated  
DC blocking voltage (per leg)  
IR  
mA  
IF=0.5 A, IR=1.0 A,  
IRR= 0.25 A  
Maximum reverse recovery time  
(per leg)  
Trr  
240  
180  
nS  
Thermal characteristics  
Maximum thermal resistance,  
junction - case (per leg)  
RΘJC  
0.35  
0.35  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mur40040ct.pdf  

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