Datasheet > MTN55N03J3

MTN55N03J3

更新时间： 2022-05-11 19:24:53

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
7页	415K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTN55N03J3 数据手册

Spec. No. : C411J3

Issued Date : 2007.07.05

Revised Date : 2009.02.04

Page No. : 1/7

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

BVDSS

RDSON

25V

55A

6mΩ

MTN55N03J3

Features

• Dynamic dv/dt Rating

• Simple Drive Requirement

• Repetitive Avalanche Rated

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

TO-252

MTN55N03J3

G：Gate

G D S

D：Drain

S：Source

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

IDM

±20

215 *1

62.5

0.5

Continuous Drain Current @VGS=10V, TC=25°C

Continuous Drain Current @VGS=10V, TC=100°C

Pulsed Drain Current

Total Power Dissipation (TC=25℃)

Linear Derating Factor

Single Pulse Avalanche Energy

Single Pulse Avalanche Current

Operating Junction and Storage Temperature

W/°C

EAS

IAS

Tj, Tstg

240 *2

-55~+150

°C

Note : *1 Pulse width limited by safe operating area

*2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A

MTN55N03J3

CYStek Product Specification

12 3 4 5 6 7

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