Datasheet > MTN4N65CJ3

MTN4N65CJ3

更新时间： 2022-02-26 14:03:32

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
11页	481K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTN4N65CJ3 数据手册

Spec. No. : C080J3

Issued Date : 2016.06.27

Revised Date :

CYStech Electronics Corp.

Page No. : 1/11

N-Channel Enhancement Mode Power MOSFET

BVDSS

ID @VGS=10V, TC=25°C

650V

2.4A

MTN4N65CJ3

ID @VGS=10V, TC=100°C

RDS(ON)@VGS=10V, ID=2A

1.8Ω(typ)

Features

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• Pb-free Lead Plating and Halogen-free Package

Applications

• Open Framed Power Supply

• Adapter

• STB

Symbol

Outline

TO-252(DPAK)

MTN4N65CJ3

D S

G：Gate D：Drain S：Source

Ordering Information

Device

Package

TO-252

Shipping

2500 pcs / Tape & Reel

MTN4N65CJ3-0-T3-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTN4N65CJ3

CYStek Product Specification

12 3 4 5 6 7...11

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