Datasheet > MTED6N25H8-0-T6-G

MTED6N25H8-0-T6-G

更新时间： 2022-02-26 14:03:31

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
10页	594K
描述
N-Channel Enhancement Mode Power MOSFET

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MTED6N25H8-0-T6-G 数据手册

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Spec. No. : C894H8

Issued Date : 2016.07.26

Revised Date :

CYStech Electronics Corp.

Page No. : 1/10

N-Channel Enhancement Mode Power MOSFET

BVDSS

250V

4.6A

1.2A

MTED6N25H8

ID @VGS=10V, TC=25°C

ID @VGS=10V, TA=25°C

426mΩ

RDSON(TYP)

VGS=10V, ID=5A

Features

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Repetitive Avalanche Rated

• Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTED6N25H8

Pin 1

G：Gate D：Drain S：Source

Pin 1

Ordering Information

Device

Package

Shipping

DFN 5 ×6

MTED6N25H8-0-T6-G

3000 pcs / tape & reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTED6N25H8

CYStek Product Specification

12 3 4 5 6 7...10

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