Datasheet > MTC2103BJ4

MTC2103BJ4

更新时间： 2024-02-03 16:56:05

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
11页	325K
描述
N & P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTC2103BJ4 数据手册

Spec. No. : C448J4

Issued Date : 2009.03.10

Revised Date :

CYStech Electronics Corp.

Page No. : 1/11

N & P-Channel Enhancement Mode Power MOSFET

N-CH

P-CH

-30V

-6A

MTC2103BJ4

BVDSS

30V

Features

21mΩ

45mΩ

RDSON(MAX)

• Low Gate Charge

• Simple Drive Requirement

• 100% UIS test @ VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V, for N-CH

• 100% UIS test @ V^D=15V, L=0.1mH, VG=-10V, IL=-6A, Rated VDS=-30V, for P-CH

• RoHS compliant & Halogen-free package

Equivalent Circuit

Outline

MTC2103BJ4

TO-252-4L

G：Gate D：Drain

S：Source

Absolute Maximum Ratings (TC=25°C, unless otherwise noted)

Limits

N-channel P-channel

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

±20

-30

±20

-6

Continuous Drain Current @ TC=25°C

Continuous Drain Current @ TC=100°C

Pulsed Drain Current *1

-5

IDM

IAS

E^AS

EAR

-24

-15

Avalanche Current

Avalanche Energy @ L=0.1mH, ID=10A(-10A for P-ch),RG=25Ω

Repetitive Avalanche Energy @ L=0.05mH *2

Total Power Dissipation (TC=25℃)

Total Power Dissipation (TC=100℃)

Operating Junction and Storage Temperature Range

2.5

Tj, Tstg

-55~+175

°C

Note : *1 Pulse width limited by maximum junction temperature

*2. Duty cycle ≤ 1%

MTC2103BJ4

CYStek Product Specification

12 3 4 5 6 7...11

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