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MT5C6408F-20/XT PDF预览

MT5C6408F-20/XT

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
MICROSS 静态存储器
页数 文件大小 规格书
12页 170K
描述
Standard SRAM, 8KX8, 20ns, CMOS, CDSO28, CERAMIC, FLATPACK-28

MT5C6408F-20/XT 数据手册

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SRAM  
MT5C6408  
8K x 8 SRAM  
SRAM MEMORY ARRAY  
PIN ASSIGNMENT  
(Top View)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
• SMD 5962-38294  
28-Pin DIP (C)  
(300 MIL)  
28-Pin LCC (EC)  
NC  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0 10  
DQ1 11  
DQ2 12  
DQ3 13  
Vss 14  
1
2
3
4
5
6
7
8
9
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
Vcc  
WE\  
CE2  
A8  
MIL-STD-883  
FEATURES  
A9  
A11  
OE\  
A10  
CE1\  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns  
• Battery Backup: 2V data retention  
• High-performance, low-power CMOS double-metal  
process  
• Single +5V (+10%) Power Supply  
• Easy memory expansion with CE1\ and CE2  
• All inputs and outputs are TTL compatible  
28-Pin Flat Pack (F)  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
NC  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
Vcc  
WE\  
CE2  
A8  
2
3
4
5
A9  
OPTIONS  
• Timing  
MARKING  
6
A11  
OE\  
A10  
CE1\  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
7
8
12ns access  
15ns access  
20ns access  
25ns access  
35ns access  
45ns access  
55ns access  
70ns access  
-12  
-15  
-20  
-25  
-35  
-45  
-55*  
-70*  
9
10  
11  
12  
13  
14  
A0  
DQ1  
DQ2  
DQ3  
Vss  
GENERAL DESCRIPTION  
The MT5C6408, 8K x 8 SRAM, employs high-speed,  
low-power CMOS technology, eliminating the need for clocks  
or refreshing. These SRAM’s have equal access and cycle  
times.  
For exibility in high-speed memory applications,  
Micross Components offers dual chip enables (CE1\, CE2)  
and output enable (OE\) capability. These enhancements can  
place the outputs in High-Z for additional exibility in system  
design.  
• Package(s)  
Ceramic DIP (300 mil)  
Ceramic LCC  
C
E C  
F
No. 108  
No. 204  
No. 302  
Ceramic Flatpack  
• Operating Temperature Ranges  
Industrial (-40oC to +85oC)  
Military (-55oC to +125oC)  
IT  
XT  
Writing to these devices is accomplished when write  
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.  
Reading is accomplished when WE\ and CE2 remain HIGH  
and CE1\ and OE\ go LOW. The device offers a reduced power  
standby mode when disabled. This allows system designs to  
achieve low standby power requirements.  
• 2V data retention/low power  
L
*Electrical characteristics identical to those provided for the 45ns ac-  
cess devices.  
These devices operate from a single +5V power supply  
and all inputs and outputs are fully TTL compatible.  
For more products and information  
please visit our web site at  
www.micross.com  
Micross Components reserves the right to change products or specications without notice.  
MT5C6408  
Rev. 4.2 01/10  
1

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