PRELIMINARY
4Mb: 256K x 18, 128K x 32/36
FLOW-THROUGH SYNCBURST SRAM
TQFP PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL TYPE
DESCRIPTION
85
85
ADSC#
Input Synchronous Address Status Controller: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ or WRITE is performed using the new address if
CE# is LOW. ADSC# is also used to place the chip into power-down
state when CE# is HIGH.
31
64
31
64
MODE
ZZ
Input Mode: This input selects the burst sequence. A LOW on this pin
selects “linear burst.” NC or HIGH on this pin selects “interleaved
burst.” Do not alter input state while device is operating.
Input Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
(a) 58, 59,
62, 63, 68, 69, 56-59, 62, 63
72, 73
(b) 8, 9, 12,
13, 18, 19,
22, 23
(a) 52, 53,
DQa
DQb
Input/ SRAM Data I/Os: For the x18 version, Byte “a” is DQa pins; Byte “b”
Output is DQb pins. For the x32 and x36 versions, Byte “a” is DQa pins;
Byte “b” is DQb pins; Byte “c” is DQc pins; Byte “d” is DQd pins.
Input data must meet setup and hold times around the rising edge
of CLK.
(b) 68, 69,
72-75, 78, 79
(c) 2, 3, 6-9,
12, 13
(d) 18, 19,
22-25, 28, 29
DQc
DQd
74
24
–
51
80
1
NC/DQPa
NC/DQPb
NC/DQPc
NC/DQPd
NC/
I/O
No Connect/Parity Data I/Os: On the x32 version, these pins are No
Connect (NC). On the x18 version, Byte “a” parity is DQPa; Byte “b”
parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte
“b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd.
–
30
15, 41, 65, 91 15, 41, 65, 91
VDD
Supply Power Supply: See DC Electrical Characteristics and Operating
Conditions for range.
4, 11, 20, 27, 4, 11, 20, 27,
54, 61, 70, 77 54, 61, 70, 77
V
DDQ
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
Operating Conditions for range.
5, 10, 14, 17, 5, 10, 14, 17,
21, 26, 40, 55, 21, 26, 40, 55,
VSS
Supply Ground: GND.
60, 67, 71,
76, 90
60, 67, 71,
76, 90
38, 39
38, 39
DNU
NC
–
–
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
1-3, 6, 7, 16,
25, 28-30,
16, 66
No Connect: These signals are not internally connected and may be
connected to ground to improve package heat dissipation.
51-53, 56, 57,
66, 75, 78, 79,
95, 96
42, 43
42, 43
NF
–
No Function: These pins are internally connected to the die and will
have the capacitance of input pins. It is allowable to leave these
pins unconnected or driven by signals. Reserved for address
expansion, pin 43 becomes an SA at 8Mb density and pin 42
becomes an SA at 16Mb density.
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_C.p65 – Rev. 6/01
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
6
©2001,MicronTechnology,Inc.