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MSV201AE3/TR PDF预览

MSV201AE3/TR

更新时间: 2024-02-01 07:55:30
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 166K
描述
Stabistor Diode, Silicon, DO-201AA

MSV201AE3/TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.13其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大钳位电压:3 V
配置:COMMON BIPOLAR TERMINAL, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:STABISTOR DIODEJEDEC-95代码:DO-201AA
JESD-30 代码:O-PALF-W2元件数量:2
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL最大功率耗散:1 W
子类别:Transient Suppressors表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

MSV201AE3/TR 数据手册

 浏览型号MSV201AE3/TR的Datasheet PDF文件第2页浏览型号MSV201AE3/TR的Datasheet PDF文件第3页 
MSV101A thru MSV101G, e3  
MSV201A thru MSV701A, e3  
BIDIRECTIONAL VARISTORS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The MSV series consists of a matched set of silicon p-n junctions  
configured for bidirectional application. They can be used in telephone  
equipment, replacing copper-oxide varistors, fractional voltage regulators,  
negative-temperature-coefficient resistors, signal limiters and expanders.  
They are ideally suited for meter/galvanometer protection, wave shaping,  
threshold limiters and zener diode compensation.  
The MSV varistor uses two or more forward biased matched silicon diodes  
in anti-parallel legs in a two-electrode device configuration. It provides a  
voltage-dependent nonlinear resistance that drops markedly as the applied  
voltage is increased similar to a TVS except it offers lower voltage features.  
MSV devices are designed for controlled protection at various current  
levels and are rated at various peak pulse currents.  
These varistors are supplied in Microsemi’s cost-effective, highly reliable,  
molded axial-leaded package. Non-standard voltages are also available.  
Devices in this series with VC2 clamping are rated to U.L.497B  
DO-201AA  
requirements. (See table).  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Bidirectional low voltage clamping 1.5 V to 9.0 V using  
Low voltage clamping protection well be low  
conventional TVS components  
forward biased diodes in series and antiparallel  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers  
Telephone equipment protection  
Protects from switching transients  
Protection from ESD and EFT per IEC 61000-4-2  
and IEC61000-4-4  
Moisture classification is Level 1 with no dry pack  
Secondary lightning protection  
required per IPC/JEDEC J-STD-020B  
Clamping voltages also specified per U.L. 497B with  
100 V/µs rise time  
RoHS Compliant devices available by adding e3 suffix  
Negative temperature coefficient (see Figure 2)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Steady State Power: 1.0 Watt at 50oC.  
CASE: Void free molded thermosetting epoxy body  
meeting UL94V-0  
Operating and Storage temperatures: -65oC to  
+150oC.  
TERMINALS: Tin-lead or RoHS Compliant  
annealed matte-Tin plating over copper readily  
solderable per MIL-STD-750, method 2026  
Surge: 30 Amps, 8.4 ms @ 25oC.  
Pulse: 1.0 ms @ 25oC for VC1 clamping*.  
POLARITY: Not marked for Bidirectional  
MARKING: Part Number  
t
clamping (0 volts to VBR min.): Less than 1x10-8  
seconds (theoretical)  
Solder temperatures: 260oC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
WEIGHT: 1.5 gram (approx.)  
See package dimensions on last page  
Copyright © 2006  
4-14-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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