Datasheet > MSPRT130KP275CV

MSPRT130KP275CV

更新时间： 2024-01-20 18:33:10

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	118K
描述
Trans Voltage Suppressor Diode, 130000W, 275V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

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MSPRT130KP275CV 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.86
最小击穿电压：	300 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	130000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	7 W	认证状态：	Not Qualified
最大重复峰值反向电压：	275 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MSPRT130KP275CV 数据手册

RT130KP275CV, RT130KP275CA,

RT130KP295CV, RT130KP295CA, e3

AIRCRAFT AC POWER BUS PROTECTION

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

Microsemi’s RT130KP275 and RT130KP295 bidirectional 130 kW

Transient Voltage Suppressors (TVSs) protects 120 volt ac airborne

electronic equipment from harsh lightning per RTCA/DO-160E Section 22

and is compatible with Section 16 for 180 volt ac 100 ms highline surges

(paragraph 16.5.2.3.1b). Microsemi also offers a broad spectrum of other

TVS products to meet your needs.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Symmetrical bidirectional TVS construction

• Pin injection protection per RTCA/DO-160E Table 22-2

up to Level 5 for Waveform 4 (6.4/69 µs) and Level 3

for Waveform 5A (40/120 μs) at 70^oC

Two Working Standoff Voltages of 275 V and 295 V

Available as either low clamp with “CV” suffix or normal

clamping features with “CA” suffix.

• Compatible with “abnormal surge voltage” as

described in 16.5.2.3.1b of RTCA/DO-160E

•

Suppresses transients up to 130 kW @ 6.4/69 µs

• The very low clamping with “CV” suffix is designed for

low clamping protection of 400V transistors, IGBTs

and MOSFETs in off-line switching power supplies.

Fast response with less than 5 ns turn-on time.

Optional 100% screening for avionics grade is available

by adding MA prefix to part number for added 100%

temperature cycle -55^oC to +125^oC (10X), surge (3X) in

each direction, 24 hours HTRB in each direction, and post

test (V_Zand I_R)

• The normal clamp device with “CA” suffix is for use in

less-sensitive applications including RFI/EMI filters

and general across-the-line protection.

• Consult Factory for other voltages with similar Peak

•

Options for screening in accordance with MIL-PRF-19500

for JAN JANTX, JANTXV, and JANS are also available by

adding MQ, MX, MV, or MSP prefixes respectively to part

numbers

Pulse Power capabilities.

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance for Class 1,2, 3 and 4

• Secondary lightning protection per IEC61000-4-5 with

•

Moisture classification is Level 1 with no dry pack required

per IPC/JEDEC J-STD-020B

2 Ohms source impedance for Class 2 and 3

• Consult Factory for other voltages with similar Peak

RoHS Compliant devices available by adding “e3” suffix

Pulse Power capabilities

MAXIMUM RATINGS

MECHANICAL & PACKAGING

•

Steady-state power dissipation: 7 W @ T_A= 25^oC

• CASE: Molded Epoxy (meets UL 94V-0 requirements)

• FINISH: Tin-Lead or RoHS Compliant annealed

matte-Tin plating solderable per MIL-STD-750,

method 2026

Peak Pulse Power (P_PP) at 25^oC: 130 kW at 6.4/69 µs

per waveform in Figure 8 (derate per Figure 2)

•

Repetition rate: 0.01% max.

• Polarity: No band required for bidirectional

Operating & storage temperatures: -55^oC to +150^oC

Temperature coefficient of voltage: +0.100%/^oC max

Solder Temperatures: 260^oC for 10 s maximum

• MARKING: Manufacturers logo and part number

(add prefix MA, MQ, MX, etc., for screened parts)

• Package dimensions: See last page

ELECTRICAL PARAMETERS @ 25^oC Devices are Bi-directional

Peak Pulse

Current

I_PP@ 6.4/69 μs

(Note 2)

Working

Standoff

Voltage

V_WM

Maximum

Standby

Current

I_D@ V_WM

μA

Minimum

Breakdown

Voltage

Maximum

Clamping

Voltage

Breakdown

Current

I_(BR)

MICROSEMI PART

NUMBER

V_BR@ I_(BR)

V_C@ I_PP(Note 1)

V max

Volts

Amps

RT130KP275CV

RT130KP275CA

RT130KP295CV

RT130KP295CA

275

295

300

400

445

410

460

292

282

NOTE 1: See MicroNote 108 for lower Clamping Voltage performance at reduced I_Pvalues relative to I_PPand P_PPratings and Figure 1.

NOTE 2: Also equivalent to 90 and 87 Amps (40 kW) respectively at a longer impulse of 10/1000 μs (see Figure 1) with clamping voltages

shown. Also see other equivalent peak pulse power performance levels for aircraft waveforms on page 3 for this device.

12-22-2005 REV C

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与MSPRT130KP275CV相关器件

型号	品牌	获取价格	描述	数据表
MSPRT130KP275CVE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 130000W, 275V V(RWM), Bidirectional, 1 Element, Silicon, R
MSPRT130KP295CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, P
MSPRT130KP295CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, R
MSPRT130KP295CV	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, P
MSPRT130KP295CVE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, R
MSPRT65KP48A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, PL
MSPRT65KP48AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Unidirectional, 1 Element, Silicon, RO
MSPRT65KP48CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MSPRT65KP48CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 65000W, 48V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MSPRT65KP54A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 65000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PL

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