Datasheet > MSPMAHSMBJSAC12

MSPMAHSMBJSAC12

更新时间： 2024-02-16 06:11:34

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
3页	173K
描述
Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

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MSPMAHSMBJSAC12 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-214AA	包装说明：	PLASTIC PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.92	最小击穿电压：	13.3 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	2.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	12 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED

MSPMAHSMBJSAC12 数据手册

HSMBJSAC5.0 thru HSMBJSAC75, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The HSMBJSAC transient voltage suppressor (TVS) series rated at 500

Watts provides an added rectifier element as shown in Figure 4 to achieve

low capacitance in applications for data or signal lines. The low capacitance

rating of less than 30 pF may be used for protecting higher frequency

applications in inductive switching environments or electrical systems

involving secondary lightning effects per IEC61000-4-5 as well as

RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional

protection is needed, two HSMBJSAC devices in anti-parallel configuration

are required as shown in Figure 6. With their very fast response time, they

also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4

DO-214AA

See package notes

respectively.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series (for

bidirectional see Figure 6)

•

Low Capacitance for data-line protection to 10 MHz

Protection for aircraft fast data rate lines per select

waveforms in RTCA/DO-160D (see MicroNote 130

for Waveform 4 and 5A capability) & ARINC 429

with bit rates of 100 kb/s (per ARINC 429, Part 1,

par. 2.4.1.1)

Suppresses transient up to 500 Watts Peak Pulse

Power @ 10/1000 µs

•

Improved performance in low capacitance of 30 pF

Economical small plastic surface mount with robust axial

subassembly package

•

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

•

Optional 100% screening for avionics grade is

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z& I_R

Class 1: HSMBJSAC5.0 to HSMBJSAC75

Class 2: HSMBJSAC5.0 to HSMBJSAC45

Class 3: HSMBJSAC5.0 to HSMBJSAC22

Class 4: HSMBJSAC5.0 to HSMBJSAC10

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are also

available by adding MQ, MX, MV, or MSP prefixes

respectively to part number, e.g. MXHSMBJSAC5.0,

MVHSMBJSAC18, etc.

•

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance

Class 1: HSMBJSAC5.0 to HSMBJSAC26

Class 2: HSMBJSAC5.0 to HSMBJSAC15

Class 3: HSMBJSAC5.0 to HSMBJSAC7.0

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Also available in axial-leaded packages with part

numbers (SAC5.0 thru SAC50)

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power Dissipation at 25^oC: 500 Watts @

•

CASE: Void Free Transfer Molded Thermosetting

Plastic package meeting UL94V-0

10/1000 μs with repetition rate of 0.01% or less*

Steady State Power Dissipation*: 2.5 Watts @ T_L

FINISH: Tin-Lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

=+75^oC

•

POLARITY: Cathode (TVS) Marked with Band

Clamping Speed (0 volts to V_(BR)Min.) less than 5

nanoseconds.

Operating and Storage Temperature: -65^oC to +150^oC

Solder temperatures: 260^oC for 10 s maximum

MARKING: Part number without HSMBJ prefix (ie.

SAC5.0, SAC5.0e3, etc)

•

WEIGHT: 0.1 Grams (Approx.)

See package dimensions on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients

that briefly drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 5 and 6 for further

protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

10-12-2005 REV G

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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