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MPX5999D PDF预览

MPX5999D

更新时间: 2024-01-26 13:02:58
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 传感器换能器压力传感器
页数 文件大小 规格书
6页 88K
描述
X-ducer SILICON PRESSURE SENSORS

MPX5999D 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.82
Is Samacsys:N最大精度 (%):2.5%
其他特性:TEMPERATURE COMPENSATED, SIGNAL CONDITIONED主体宽度:5.33 mm
主体高度:13.31 mm主体长度或直径:15.55 mm
外壳:PLASTIC线性度 (%):2.5 %
安装特点:THROUGH HOLE MOUNT标称偏移:0.20V
最大工作电流:10 mA最高工作温度:125 °C
最低工作温度:-40 °C输出范围:0.20-4.70V
输出类型:ANALOG VOLTAGE封装形状/形式:ROUND
端口类型:HOLE最大压力范围:145.03 Psi
最小压力范围:压力传感模式:DIFFERENTIAL
响应时间:1000 µs灵敏度(mV / V):4.5 mV/V
传感器/换能器类型:PRESSURE SENSOR,PEIZORESISTIVE最大供电电压:5.25 V
最小供电电压:4.75 V表面贴装:NO
端接类型:SOLDERBase Number Matches:1

MPX5999D 数据手册

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Order this document  
by MPX5999D/D  
SEMICONDUCTOR TECHNICAL DATA  
X–ducer  
SILICON  
PRESSURE SENSORS  
The MPX5999D piezoresistive transducer is a state–of–the–art pressure sensor  
designed for a wide range of applications, but particularly for those employing a  
microcontroller or microprocessor with A/D inputs. This patented, single element  
X–ducer combines advanced micromachining techniques, thin–film metallization and  
bipolar semiconductor processing to provide an accurate, high level analog output signal  
that is proportional to applied pressure.  
Figure 1 shows a block diagram of the internal circuitry integrated on the stand–alone  
sensing chip.  
Features  
BASIC CHIP  
CARRIER ELEMENT  
CASE 867–08, STYLE 1  
Temperature Compensated Over 0 to 85°C  
Ideally Suited for Microprocessor or Microcontroller–Based Systems  
Patented Silicon Shear Stress Strain Gauge  
Durable Epoxy Unibody Element  
PIN NUMBER  
V
S
1
2
3
V
4
5
6
N/C  
N/C  
N/C  
out  
Gnd  
3
V
S
NOTE: Pins 4, 5, and 6 are internal  
device connections. Do not connect  
to external circuitry or ground. Pin 1  
is noted by the notch in the Lead.  
THIN FILM  
TEMPERATURE  
COMPENSATION  
AND  
GAIN STAGE #2  
AND  
GROUND  
REFERENCE  
SHIFT CIRCUITRY  
X–ducer  
SENSING  
ELEMENT  
1
V
out  
GAIN STAGE #1  
2
PINS 4, 5 AND 6 ARE NO CONNECTS  
GND  
Figure 1. Fully Integrated Pressure Sensor Schematic  
(1)  
MAXIMUM RATINGS  
Parametrics  
(2)  
Symbol  
Value  
4000  
Unit  
kPa  
kPa  
°C  
Overpressure (P1 > P2)  
P
max  
(2)  
Burst Pressure (P1 > P2)  
P
burst  
6000  
Storage Temperature  
Operating Temperature  
T
stg  
40° to +150  
40° to +125  
T
A
°C  
1. T = 25°C unless otherwise noted. Maximum Ratings apply to Case 867–08 only.  
C
2. Extended exposure at the specified limits may cause permanent damage or degradation to the device.  
3. This sensor is designed for applications where P1 is always greater than, or equal to P2.  
Senseon and X–ducer are trademarks of Motorola, Inc.  
(Replaces MPX5999)  
Motorola, Inc. 1997  

MPX5999D 替代型号

型号 品牌 替代类型 描述 数据表
MPX5999D NXP

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