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MP358W-B PDF预览

MP358W-B

更新时间: 2024-09-30 12:59:47
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 311K
描述
Bridge Rectifier Diode, 35A, 800V V(RRM),

MP358W-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.89
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-609代码:e0
最大非重复峰值正向电流:400 A元件数量:4
最高工作温度:150 °C最大输出电流:35 A
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MP358W-B 数据手册

 浏览型号MP358W-B的Datasheet PDF文件第2页 
MP3505  
THRU  
M C C  
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ꢍꢎꢍꢏꢎꢅꢐꢑꢉꢒꢂꢉꢅꢓꢑꢌ  
ꢆꢔꢉꢑꢒꢕꢄꢃꢑꢔꢖꢅꢆꢗꢅꢘꢎꢙꢎꢎ  
ꢚꢔꢄꢛꢈꢜꢅꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢙ  
$ꢉ%ꢜꢅ   ꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢘ  
MP3510  
Features  
35 Amp Single Phase  
Bridge Rectifier  
·
·
·
·
Mounting Hole For #8 Screw  
Plastic Case With Metal Bottom  
Any Mounting Position  
50 to 1000 Volts  
Surge Rating Of 400 Amps  
MP-50  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
B
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
MP3505  
MP351  
MP352  
MP354  
MP356  
MP358  
MP3510  
MP3505  
MP351  
MP352  
MP354  
MP356  
MP358  
MP3510  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000v  
100V  
E
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
G
+
AC  
1000v  
D
A
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
35.0A  
TC = 55°C  
-
AC  
Peak Forward Surge  
Current  
Maximum Forward  
Voltage Drop Per  
Element  
IFSM  
400A  
8.3ms, half sine  
J
VF  
1.1V  
IFM = 17.5A per  
element;  
A
TJ = 25°C  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
I2t Rating for Fusing  
t<8.3mS  
DIMENSIONS  
MM  
IR  
5mA  
500mA  
TJ = 25°C  
TJ = 125°C  
INCHES  
MIN  
1.118  
.432  
.468  
.689  
.618  
.193  
.618  
.531  
DIM  
A
B
C
D
E
G
H
MAX  
1.130  
.442  
.558  
.728  
.657  
---  
MIN  
28.40  
10.97  
11.89  
17.50  
15.70  
4.90  
MAX  
28.70  
11.23  
14.17  
18.50  
16.70  
---  
NOTE  
I2t  
2
660  
A S  
Æ
Typical Themal  
Resistance Junction  
to case(per element)  
.657  
.571  
15.70  
13.50  
16.70  
14.50  
R jc  
3.0  
J
K/W  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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