5秒后页面跳转
MMBZ5226C-V PDF预览

MMBZ5226C-V

更新时间: 2024-01-21 22:04:19
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
5页 76K
描述
DIODE 3.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT PACKAGE-3, Voltage Regulator Diode

MMBZ5226C-V 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.31配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:28 ΩJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.3 W认证状态:Not Qualified
标称参考电压:3.3 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:2%工作测试电流:20 mA
Base Number Matches:1

MMBZ5226C-V 数据手册

 浏览型号MMBZ5226C-V的Datasheet PDF文件第2页浏览型号MMBZ5226C-V的Datasheet PDF文件第3页浏览型号MMBZ5226C-V的Datasheet PDF文件第4页浏览型号MMBZ5226C-V的Datasheet PDF文件第5页 
MMBZ5225-V to MMBZ5267-V  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
Silicon planar power zener diodes.  
• Standard Zener voltage tolerance is 5 %  
with a "B" suffix (e.g.: MMBZ5225B-V),  
suffix “C” is 2 % tolerance.  
3
• High temperature soldering guaranteed:  
260 °C/ 4x 10 s at terminals.  
• These diodes are also available in MiniMELF case  
with the type designation ZMM5225...ZMM5267,  
SOD-123 case with the type designation  
MMSZ5225-V... MMSZ5267-V.  
1
2
18078  
Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOT-23  
Weight: approx. 8.8 mg  
Packaging codes/options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/3 k per 7" reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current  
(see table "Characteristics")  
225 1)  
300 2)  
Ptot  
Ptot  
mW  
mW  
TA = 25 °C  
Power dissipation  
Notes  
1) On FR - 5 board using recommended solder pad layout  
2) On alumina substrate  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
556 1)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
Tj  
Maximum junction temperature  
Storage temperature range  
150  
°C  
°C  
TS  
- 65 to + 175  
Note  
1) On FR - 5 board using recommended solder pad layout  
For technical support, please contact: DiodesSSP@vishay.com  
Document Number 85772  
Rev. 1.5, 23-Feb-10  
www.vishay.com  
1

与MMBZ5226C-V相关器件

型号 品牌 获取价格 描述 数据表
MMBZ5226C-V-G08 VISHAY

获取价格

DIODE 3.3 V, 0.23 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Vol
MMBZ5226C-V-G-08 VISHAY

获取价格

DIODE 3.3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Vo
MMBZ5226C-V-G18 VISHAY

获取价格

DIODE 3.3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Vo
MMBZ5226C-V-G-18 VISHAY

获取价格

DIODE 3.3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Vo
MMBZ5226C-V-G-8 VISHAY

获取价格

DIODE 3.3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Vo
MMBZ5226C-V-GS08 VISHAY

获取价格

DIODE 3.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT PACKAG
MMBZ5226C-V-GS18 VISHAY

获取价格

DIODE 3.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT PACKAG
MMBZ5226DW SWST

获取价格

稳压二极管
MMBZ5226E8 VISHAY

获取价格

Zener Diode, 3.3V V(Z), 5%, 0.225W
MMBZ5226ELT1 ROCHESTER

获取价格

3.3V, 0.225W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC, CASE 318