Datasheet > MMBD4148S62Z

MMBD4148S62Z

更新时间： 2023-01-03 03:25:32

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
2页	30K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon

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MMBD4148S62Z 数据手册

MMBD4148 / SE / CC / CA

Connection Diagrams

4148SE

4148

2NC

4148CC

4148CA

MARKING

5H MMBD4148CA D6

MMBD4148

MMBD4148CC D5

MMBD4148SE D4

SOT-23

Small Signal Diodes

Absolute Maximum Ratings* T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

100

200

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

2.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-55 to +150

T_stg

T_J

Operating Junction Temperature

150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

350

357

R_θJA

°C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Test Conditions

Min

Symbol

Parameter

Max

Units

V_R

Breakdown Voltage

I_R= 5.0 µA

I = 100

100

V_F

I_R

Forward Voltage

Reverse Current

I_F= 10 mA

1.0

µA

V_R= 20 V

V = 20 V, T = 150 C

5.0

V_R= 75 V

C_T

t_rr

Total Capacitance

4.0

V_R= 0, f = 1.0 MHz

Reverse Recovery Time

I_F= 10 mA, V_R= 6.0 V,

I_RR= 1.0 mA, R_L= 100 Ω

4.0

MMBD4148, Rev.

2001 Fairchild Semiconductor Corporation

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