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MMAD130_02

更新时间： 2024-01-31 00:53:42
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管开关电视
页数 文件大小 规格书
2页 59K
描述
Switching Diode Array Steering Diode TVS ArrayTM

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MMAD130_02 数据手册

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MMAD130  
Switching Diode Array  
Steering Diode TVS ArrayTM  
S C O T T S D A L E D I V I S I O N  
SWITCHING AND  
STEERING ARRAY  
DESCRIPTION  
These low capacitance diode arrays are multiple, discrete, isolated junctions  
fabricated by a planar process and mounted in a 14-PIN package for use as  
steering diodes protecting up to ten I/O ports from ESD, EFT, or surge by  
directing them either to the positive side of the power supply line or to  
ground (see figure 1). An external TVS diode may be added between the  
positive supply line and ground to prevent overvoltage on the supply rail.  
They may also be used in fast switching core-driver applications. This  
includes computers and peripheral equipment such as magnetic cores, thin-  
film memories, plated-wire memories, etc., as well as decoding or encoding  
applications. These arrays offer many advantages of integrated circuits such  
as high-density packaging and improved reliability. This is a result of fewer  
pick and place operations, smaller footprint, smaller weight, and elimination  
of various discrete packages that may not be as user friendly in PC board  
mounting.  
1
2
3
4
5
6
14  
13  
12  
11  
10  
9
7
8
Top Viewing Pin Layout  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
·
·
·
·
·
·
20 Diode Array / protects 10 lines  
Molded 14-Pin SOIC Package  
UL 94V-0 Flammability Classification  
Low Capacitance 1.5 pF per diode  
Switching speeds less than 5 ns  
IEC 61000-4 compatible  
· High Frequency Data Lines  
· RS-232 & RS-422 Interface Networks  
· Ethernet: 10 Base T  
· Computer I / O Ports  
· LAN  
· Switching Core Drivers  
61000-4-2 (ESD): Air 15kV, contact – 8 kV  
61000-4-4 (EFT): 40A – 5/50 ns  
61000-4-5 (surge): 12A, 8/20 µs  
MECHANICAL AND PACKAGING  
MAXIMUM RATINGS  
· Weight 0.127 grams (approximate)  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Forward Surge Current: 2 Amps (8.3 ms)  
12 Amps (8/20 µs)  
Continuous Forward Current: 400 mA (one diode)  
Power Dissipation (PD): 1500 mW (total)  
· Marking: Logo, device number, date code  
· Pin #1 defined by indent on top of package  
· Tape & Reel packaging: 2500 pcs (STANDARD)  
· Carrier tube packaging: 55 pcs  
·
·
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified  
LEAKAGE  
CURRENT  
IR  
LEAKAGE  
CURRENT  
IR  
BREAKDOWN  
VOLTAGE  
VBR  
WORKING  
PEAK  
REVERSE  
VOLTAGE  
VRWM  
CAPACITANCE  
REVERSE  
RECOVERY  
TIME  
FORWARD  
VOLTAGE  
VF  
FORWARD  
VOLTAGE  
VF  
C
@ 0 V  
@ IBR =100µA  
TA = 25°C  
TA = 150°C  
trr  
IF = 10 mA  
IF = 100 mA  
PART  
NUMBER  
V
V
µA  
µA  
pF  
ns  
V
V
MIN  
90  
MAX  
75  
MAX  
0.200  
@VR  
20  
MAX  
300  
@VR  
20  
TYP  
1.5  
MAX  
5.0  
MAX  
1.00  
MAX  
1.20  
MMAD130  
Copyright ã 2001  
MSCXXXX.PDF 06-24 2002 REV J  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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