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ML64116R PDF预览

ML64116R

更新时间: 2024-01-19 05:19:50
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三菱 - MITSUBISHI /
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2页 37K
描述
FOR OPTICAL INFORMATION SYSTEMS

ML64116R 数据手册

 浏览型号ML64116R的Datasheet PDF文件第2页 
MITSUBISHI LASER DIODES  
ML6XX16 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
TYPE  
NAME  
ML60116R , ML64116R  
DESCRIPTION  
FEATURES  
ML6XX16 is a high power AlGaAs semiconductor laser which  
provides a stable, single transverse mode oscillation with  
emission wavelength of 785nm and standard light output of  
30mW.  
ML6XX16 is produced by the MOCVD crystal growth method  
which is excellent in mass production and characteristics  
uniformity. This is a high -performance, highly reliable, and  
long life semiconductor laser.  
Output 30mW (CW) 40mW (pulse)  
Short astigmatic distance  
MQW * active layer  
* : Multiple Quantum Well  
Built-in monitor photodiode  
APPLICATION  
Optical disc drive ( rewritable , write once)  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Conditions  
Ratings  
Unit  
mW  
40  
50  
2
CW  
Light output power  
Po  
Pulse(Note 2)  
VRL  
VRD  
Reverse voltage (laser diode)  
Reverse voltage (Photodiode)  
-
-
V
V
30  
IFD  
mA  
°C  
°C  
10  
Forward current (Photodiode)  
Case temperature  
-
-
-
Tc  
-40 ~ +60  
Tstg  
-55 ~ +100  
Storage temperature  
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,  
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi  
Semiconductor Quality Assurance Department.  
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1ms  
ELECTRICAL/OPTICAL CHARACTERISTICS (Case temperature Tc=25°C)  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max  
Unit  
Ith  
Iop  
η
CW  
-
-
mA  
mA  
Threshold current  
Operation current  
30  
80  
50  
110  
0.75  
2.5  
CW,Po=30mW  
CW,Po=30mW  
CW,Po=30mW  
CW,Po=30mW  
0.40  
Slope efficiency  
0.55  
mW/mA  
V
Vop  
λp  
Operating voltage  
2.0  
785  
10  
Peak wavelength  
Beam divergence angle  
(parallel)  
Beam divergence angle  
770  
8
800  
13  
nm  
CW,Po=30mW  
CW,Po=30mW  
θ//  
°
22  
θ
28  
25  
°
(perpendicular)  
Monitoring output current  
Im(Note 3) (Photodiode)  
Im  
CW,Po=30mW,VRD=1V  
RL=10(Note 4)  
-
-
0.2  
0.5  
-
-
-
mA  
ID  
Ct  
Dark current (Photodiode)  
Capacitance (Photodiode)  
VRD=10V  
VRD=5V  
-
-
0.5  
-
uA  
pF  
7
Note 3: Applicable to ML64116R  
Note 4: RL=the load resistance of photodiode  
as of December '99  
MITSUBISHI  
ELECTRIC  
( 1 / 2 )  

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