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MK02FN128VLH10 PDF预览

MK02FN128VLH10

更新时间: 2022-02-26 10:52:18
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
61页 754K
描述
Kinetis K02 64 KB/128 KB Flash

MK02FN128VLH10 数据手册

 浏览型号MK02FN128VLH10的Datasheet PDF文件第2页浏览型号MK02FN128VLH10的Datasheet PDF文件第3页浏览型号MK02FN128VLH10的Datasheet PDF文件第4页浏览型号MK02FN128VLH10的Datasheet PDF文件第6页浏览型号MK02FN128VLH10的Datasheet PDF文件第7页浏览型号MK02FN128VLH10的Datasheet PDF文件第8页 
Ratings  
1 Ratings  
1.1 Thermal handling ratings  
Symbol  
TSTG  
Description  
Min.  
–55  
Max.  
150  
Unit  
°C  
Notes  
Storage temperature  
Solder temperature, lead-free  
1
2
TSDR  
260  
°C  
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.  
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic  
Solid State Surface Mount Devices.  
1.2 Moisture handling ratings  
Symbol  
Description  
Min.  
Max.  
Unit  
Notes  
MSL  
Moisture sensitivity level  
3
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic  
Solid State Surface Mount Devices.  
1.3 ESD handling ratings  
Symbol  
VHBM  
Description  
Min.  
-2000  
-500  
Max.  
+2000  
+500  
Unit  
V
Notes  
Electrostatic discharge voltage, human body model  
1
2
VCDM  
Electrostatic discharge voltage, charged-device  
model  
V
ILAT  
Latch-up current at ambient temperature of 105°C  
-100  
+100  
mA  
3
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human  
Body Model (HBM).  
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for  
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.  
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.  
1.4 Voltage and current operating ratings  
Kinetis K02 64 KB/128 KB Flash, Rev. 4, 08/2016  
5
NXP Semiconductors  

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