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MIG15Q901H PDF预览

MIG15Q901H

更新时间: 2024-02-11 12:03:15
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网双极性晶体管功率控制
页数 文件大小 规格书
1页 27K
描述
TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MIG15Q901H 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-D12
Reach Compliance Code:unknown风险等级:5.81
其他特性:3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE最大集电极电流 (IC):15 A
集电极-发射极最大电压:1200 V配置:COMPLEX
JESD-30 代码:R-PUFM-D12元件数量:7
端子数量:12封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

MIG15Q901H 数据手册

  

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