Datasheet > MDA0336EURH

MDA0336EURH

更新时间： 2024-09-30 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
5页	673K
描述
Common-Drain N-Channel Trench MOSFET 30V, 9A, 9.5m(ohm)

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MDA0336EURH 数据手册

MDA0336E

Common-Drain N-Channel Trench MOSFET 30V, 9A, 9.5mΩ

General Description

Features

The MDA0336E uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality.

- V_DS= 20 V

- I_D= 9 A

- Drain-Source ON Resistance;

R_DS(ON)< 9.5mΩ @ V_GS= 4.5V

R_DS(ON)< 10mΩ @ V_GS= 4.0V

R_{DS (ON)}< 10.5mΩ @ V_GS= 3.5V

R_{DS (ON)}< 11.5mΩ @ V_GS= 3.1V

- ESD Protection = HBM CLASS 2

Applications

- Portable Battery Protection Module

Note 1

Absolute Maximum Ratings (Ta = 25 C unless otherwise noted)

Characteristics

Symbol

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

±12

T_A=25^oC

T_A=70^oC

Continuous Drain Current

Pulse Drain Current

I_D

I_DM

T_A=25^oC

T_A=70^oC

1.7

Power Dissipation for Single Operation

Junction and Storage Temperature Range

P_DSM

T_J, T_stg

1.0

-55~150

^oC

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

Unit

Thermal Resistance, Junction-to-Ambient(Steady-State)

Thermal Resistance, Junction-to-Case

^oC/W

R_θJC

Dec 2014. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5

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