Datasheet > MD57-0001SMB

MD57-0001SMB

更新时间： 2024-02-06 16:45:12

品牌	Logo	应用领域
泰科 - TE		放大器
页数	文件大小	规格书
4页	73K
描述
Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 GHz - 1.0 GHz

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中文翻译

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技术参数
数据手册

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MD57-0001SMB 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.26	Is Samacsys：	N
Base Number Matches：	1

MD57-0001SMB 数据手册

Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8-1.0 GHz

MD57-0001

Low Cost MMIC Mixer with Local Oscillator

Amplifier, 0.8 GHz - 1.0 GHz

Features

SOT-26

•

-5 to +5 dBm LO Drive Level

High Isolation, 28 dB LO to RF

Inexpensive SOT-26 Package

114±.008

2,9±0,2

.075±.008

1,90 ±0,2

Description

+.008

-.004

+0.20

-0.10

The MD57-0001 is a floating FET mixer with an on-chip LO

amplifier. The LO drive for the MD57-0001 can range from -5 to

+5 dBm without severly impacting the mixer’s performance. The

MD57-0001 is ideally suited for cellular band communications

handsets’ that can provide only minimal amounts of LO drive.

Typical applications include frequency up/down conversion and

IQ modulation and demodulation in digital receivers and

transmitters.

.063

1,60

.110 ±.008

2,80 ±0,2

16XY

PIN # 1

.002±.002

0,05 ±0,05

+.004

-.007

+0.10

-0.18

.031

0,79

+.004

.016

The MD57-0001 utilizes a patented “floating-FET” architecture.

The on-chip LO amplifier allows the MD57-0001 to operate with

as little as -5 dBm of LO drive making it an ideal choice for low

power portable designs.

-.002

+0.10

0,40

-0.05

+.008

043

-.004

+0.20

The MD57-0001 is fabricated using M/A-COM’s 0.5 micron low

noise GaAs MESFET process. This process features full

passivation for increased performance and reliability. The

MD57-0001 is 100% RF tested to ensure superior performance

specification compliance.

1,10

-0.10

+.004

-.002

+0.10

-0.05

.006

0,15

008 MIN

0,20 MIN

Ordering Information

Part Number

Package

MD57-0001

SOT-26, 6-Lead Plastic Package

Forward Tape and Reel*

Designer’s Kit

MD57-0001TR

MD57-0001SMB

*If a specific reel size is required, consult factory for part number.

Electrical Specifications¹

T_A= +25°C, RF = 900MHz (-15 dBm), LO = 730MHz (-5 dBm), IF = 170MHz, V_DD= 2.7V, Typical I_DD= 5mA

Parameters

Conversion Loss

Isolation

VSWR

Abbv.

L_c

ISO

Test Conditions

Units

—

Min.

—

Typ.

9.3

2.0:1

Max.

—

LO to RF

LO to IF

RF to IF

RF Port

LO Port

VSWR

IF Port

Input 1 dB Compression

Two Tone IM Ratio¹

P_1dB

dBc

RF Freq. = 900 MHz, LO = -5 dBm

Two tones at -10 dBm each;

Tone spacing = 1 MHz, IF = 170 MHz

dBm

dBc

—

1. IMR vs. RF drive can be calculated by the formula: IMR = [44 - 1.5(P_IN)]

V2.00

M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087

■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.

Specifications subject to change without notice.

12 3 4

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与MD57-0001SMB相关器件

型号	品牌	获取价格	描述	数据表
MD57-0001TR	TE	获取价格	Low Cost MMIC Mixer with Local Oscillator Amplifier, 0.8 GHz - 1.0 GHz
MD57-0002	TE	获取价格	High Linearity MMIC Mixer with Integrated Local Oscillator Amplifier, 1700 - 2000 MHz
MD57-0002SMB	TE	获取价格	High Linearity MMIC Mixer with Integrated Local Oscillator Amplifier, 1700 - 2000 MHz
MD57-0002TR	TE	获取价格	High Linearity MMIC Mixer with Integrated Local Oscillator Amplifier, 1700 - 2000 MHz
MD5764802	OKI	获取价格	18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
MD5802	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
MD5803	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
MD5804	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
MD5805	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
MD5806	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon

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