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MCMA260P1600YA PDF预览

MCMA260P1600YA

更新时间: 2024-01-21 00:17:00
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5页 208K
描述
Silicon Controlled Rectifier, 412A I(T)RMS, 262000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, ROHS COMPLIANT, Y4, 7 PIN

MCMA260P1600YA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:ROHS COMPLIANT, Y4, 7 PIN
针数:7Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.68
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
快速连接描述:2G-2GR螺丝端子的描述:A-K-AK
最大维持电流:150 mAJESD-30 代码:R-CUFM-X5
最大漏电流:30 mA元件数量:2
端子数量:5最大通态电流:262000 A
最高工作温度:140 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:412 A
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

MCMA260P1600YA 数据手册

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MCMA260P1600YA  
Ratings  
Thyristor  
Symbol  
VRSM/DSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 140°C  
TVJ = 25°C  
1700  
1600  
300  
V
V
max. non-repetitive reverse/forward blocking voltage  
max. repetitive reverse/forward blocking voltage  
VRRM/DRM  
IR/D  
VR/D =1600 V  
VR/D =1600 V  
IT = 200 A  
IT = 400 A  
IT = 200 A  
IT = 400 A  
TC = 85°C  
180° sine  
µA  
reverse current, drain current  
20 mA  
forward voltage drop  
1.12  
V
V
V
V
A
A
V
VT  
1.33  
1.06  
1.31  
260  
TVJ  
=
°C  
125  
average forward current  
RMS forward current  
TVJ = 140°C  
TVJ = 140°C  
ITAV  
IT(RMS)  
VT0  
408  
0.81  
threshold voltage  
for power loss calculation only  
slope resistance  
1.23 mΩ  
0.13 K/W  
K/W  
rT  
RthJC  
RthCH  
Ptot  
thermal resistance junction to case  
thermal resistance case to heatsink  
0.08  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
880  
8.30  
8.97  
7.06  
7.62  
W
kA  
kA  
kA  
kA  
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400V f = 1 MHz  
tP = 30 µs  
ITSM  
TVJ = 140°C  
VR = 0 V  
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
344.5 kA²s  
334.3 kA²s  
248.9 kA²s  
241.6 kA²s  
pF  
TVJ = 140°C  
VR = 0 V  
junction capacitance  
TVJ = 25°C  
TC = 140°C  
366  
CJ  
120  
60  
W
W
W
PGM  
max. gate power dissipation  
tP = 500 µs  
20  
PGAV  
average gate power dissipation  
critical rate of rise of current  
TVJ = 140°C; f = 50 Hz  
repetitive, IT = 780 A  
100 A/µs  
(di/dt)cr  
0.5  
tP = 200 µs;diG /dt =  
A/µs;  
IG = 0.5A; V = VDRM  
V = VDRM  
non-repet., IT = 500 A  
TVJ = 140°C  
260 A/µs  
critical rate of rise of voltage  
gate trigger voltage  
1000 V/µs  
(dv/dt)cr  
VGT  
RGK = ∞; method 1 (linear voltage rise)  
VD = 6 V  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 140°C  
2
3
V
V
gate trigger current  
VD = 6 V  
150 mA  
220 mA  
IGT  
gate non-trigger voltage  
gate non-trigger current  
latching current  
VD = VDRM  
tp = 30 µs  
0.25  
V
VGD  
IGD  
IL  
10 mA  
TVJ = 25°C  
200 mA  
IG  
=
0.5A; diG/dt = 0.5 A/µs  
holding current  
VD = 6 V RGK = ∞  
TVJ = 25°C  
TVJ = 25°C  
150 mA  
IH  
gate controlled delay time  
VD = ½ V  
2
µs  
tgd  
DRM  
IG  
VR = 100 V; IT = 260 A; V = VDRM TVJ =125 °C  
di/dt = 10 A/µs dv/dt = 50 V/µs µs  
=
0.5A; diG/dt = 0.5 A/µs  
turn-off time  
200  
µs  
tq  
tp = 200  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20160408b  
© 2016 IXYS all rights reserved  

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