Datasheet > MCL-SS352

MCL-SS352

更新时间： 2024-02-15 01:53:48

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
3页	260K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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MCL-SS352 数据手册

MCL-SS352

SILICON EPITAXIAL PLANAR DIODE

LS-31

Features

•

Small package

Low forward voltage

Fast reverse recovery time

Small total capacitance

Applications

Extreme fast switches

Absolute Maximum Ratings (T_j= 25^OC)

Parameter

Maximum Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

200

Maximum Peak Forward Current

Surge Current (10ms)

I_FM

I_FSM

Average Forward Current

Power Dissipation

100

^OC

P_tot

T_j

200

Junction Temperature

125

Storage Temperature Range

T_s

-55 … +125

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 18/10/2002

12 3

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