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MCH3143

更新时间: 2024-01-05 10:12:38
品牌 Logo 应用领域
三洋 - SANYO 晶体转换器晶体管
页数 文件大小 规格书
5页 45K
描述
PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

MCH3143 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.55
最大集电极电流 (IC):2.5 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):370 MHzBase Number Matches:1

MCH3143 数据手册

 浏览型号MCH3143的Datasheet PDF文件第2页浏览型号MCH3143的Datasheet PDF文件第3页浏览型号MCH3143的Datasheet PDF文件第4页浏览型号MCH3143的Datasheet PDF文件第5页 
Ordering number : ENN8209  
PNP / NPN Epitaxial Planar Silicon Transistors  
MCH3143 / MCH3243  
DC / DC Converter Applications  
Applications  
Relay drivers, lamp drivers, motor drivers, flash.  
Features  
Adoption of MBIT processes.  
High current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).  
High allowable power dissipation.  
Specifications ( ) : MCH3143  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
(--)15  
(--12)15  
(--)5  
V
V
I
(--)2.5  
(--)5  
A
C
Collector Current (Pulse)  
Base Current  
I
A
CP  
I
B
(--)500  
0.8  
mA  
W
°C  
°C  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
Mounted on a ceramic board (600mm20.8mm)  
C
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
I
V
CB  
V
EB  
V
CE  
V
CE  
V
CB  
=(--)12V, I =0  
(--)0.1  
(--)0.1  
560  
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(--)4V, I =0  
C
EBO  
h
FE  
=(--)2V, I =(--)100mA  
200  
C
Gain-Bandwidth Product  
Output Capacitance  
f
T
=(--)2V, I =(--)300mA  
C
370  
(22)16  
MHz  
pF  
Cob  
=(--)10V, f=1MHz  
Marking : MCH3143 : AG, MCH3243 : CQ  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
12805EA TS IM TB-00001030 No.8209-1/5  

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