MCC72-18io8B
Thyristor
250
200
105
2500
DC
VR = 0 V
50 Hz, 80% VRRM
180° sin
120°
60°
2000
30°
ITSM
IFSM
I2t
150
1500
ITAVM
TVJ = 45°C
TVJ = 45°C
104
[A]
TVJ = 125°C
[A]
100
50
0
1000
[A2s]
TVJ = 125°C
500
103
0
10-3
10-2
10-1
100
101
0
50
100
150
1
2
3
6
8
10
t [s]
t [ms]
TC [°C]
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 3 Maximum forward current
at case temperature
Fig. 2 I2t versus time (1-10 ms)
10
250
200
RthJA
[K/W]
0.4
1: IGT, TVJ = 125°C
2: IGT, TVJ 25°C
=
3: IGT, TVJ = -40°C
0.6
0.8
1
150
100
50
VG
3
1.2
1.5
2
2
6
PT
1
5
1
[V]
4
DC
3
[W]
180° sin
120°
60°
4: PGAV= 0.5 W
5: PGM 5 W
30°
=
IGD, TVJ = 125°C
6: PGM = 10W
0.1
100
0
101
102
103 104
0
50
100
150
0
50
100
150
TA [°C]
ITAVM, IFAVM [A]
IG [mA]
Fig. 5 Gate trigger characteristics
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
1000
1200
1200
800
TVJ = 25°C
RthKA
[K/W]
0.1
0.15
0.2
typ.
Limit
100
0.25
0.3
Ptot
tgd
[µs]
10
600
0.4
[W]
0.5
Circuit
B6
400
0.6
3x MCC72 or
3x MCD72
200
0
1
10
0
100
200
300
0
50
100
150
100
1000
IdAVM [A]
TA [°C]
IG [mA]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701d
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