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MC-7883 PDF预览

MC-7883

更新时间： 2024-02-03 22:30:47
品牌 Logo 应用领域
CEL 有线电视射频微波放大器
页数 文件大小 规格书
2页 84K
描述
NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER

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中文翻译

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MC-7883 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SOT-115J
Reach Compliance Code：compliant风险等级：5.13
Is Samacsys：N其他特性：LOW NOISE
特性阻抗：75 Ω构造：MODULE
增益：22 dBJESD-609代码：e6
功能数量：1最大工作频率：870 MHz
最小工作频率：40 MHz最高工作温度：85 °C
最低工作温度：-30 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：SOT-115J电源：24 V
射频/微波设备类型：WIDE BAND LOW POWER子类别：RF/Microwave Amplifiers
最大压摆率：360 mA技术：GAAS
端子面层：Tin/Bismuth (Sn/Bi)Base Number Matches：1

MC-7883 数据手册

 浏览型号MC-7883的Datasheet PDF文件第2页 
MC-7881  
MC-7882  
MC-7883  
NEC's 870 MHz GaAs CATV  
POWER DOUBLER AMPLIFIER  
MC-7884  
OUTLINE DIMENSIONS (Units in mm)  
FEATURES  
• GaAs ACTIVE DEVICES  
• LOW DISTORTION  
PACKAGE OUTLINE H02  
• HIGH LINEAR GAIN:  
45.08 MAX  
MC-7881 - GL = 18 dB MIN at f = 870 MHz  
MC-7882 - GL = 20 dB MIN at f = 870 MHz  
MC-7883 - GL = 22 dB MIN at f = 870 MHz  
MC-7884 - GL = 25 dB MIN at f = 870 MHz  
38.1±0.25  
4.25 + 0.25  
27.5 MAX  
- 0.35  
3.2 MAX  
V
DD  
14.85 MAX  
5
4.0±0.25  
8.1 MAX  
1
9
• LOW RETURN LOSS  
19.05±0.38  
In  
Out  
• LOW GAIN CHANGE OVER TEMPERATURE  
6-32 unc 2B  
21.5 MAX  
25.4±0.25  
2.54±0.25  
2
3 7 8  
• SPECIFIED FOR 79, 110, and 132 CHANNELS  
PERFORMANCE  
Gnd  
0.51±0.05  
• HIGH RELIABILITYAND RUGGEDNESS:  
Withstands environmental extremes as well as Silicon  
devices (Surge, ESD, Etc.)  
1
2
3
5
7 8 9  
10.75 ±0.25  
2.54 ±0.38  
4.19±0.13  
A
DESCRIPTION  
6.3  
2.5  
0.51±0.05  
0.38.. A  
NEC's MC-7881, MC-7882, MC-7883, and MC-7884 are GaAs  
Multi-Chip Modules designed for use as output stages in CATV  
applications up to 870 MHz. The only difference between these  
devices is gain, which is 18 dB, 20 dB, 22 dB, and 25 dB  
respectively. Because these units are GaAs devices they have  
low distortion, low noise figure, and low return loss across the  
entire frequency band.  
±0.05  
APPLICATIONS  
• CATV HEADEND SYSTEMS  
• CATV OPTICAL NODES  
• CATV DISTRIBUTIONAMPS  
Like the previous generation of products, these devices sur-  
vive such hazards as surge and ESD as well as their silicon  
competitors, but deliver superior performance with low DC  
current required.All devices are assembled and tested using  
fully automated equipment to maximize consistency in part to  
part performance, and reliability is assured by NEC's strin-  
gent quality and process control procedures.These parts come  
in industry compatible hybrid packages.  
ELECTRICAL CHARACTERISTICS (TA = 30±5 °C, VDD = 24 V, ZS = ZL = 75 Ω)  
PART NUMBER  
MC-7881  
MC-7882  
MC-7883  
MC-7884  
SYMBOLS  
CHARACTERISTICS  
Frequency Range  
Linear Gain  
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX TEST CONDITIONS  
BW  
GL  
S
MHz  
dB  
50  
–
–
870 50  
–
–
870 50  
–
–
870 50  
–
–
870  
18.0  
19.0 20.0  
21.0 22.0  
23.0 25.0  
26.0 f = 870 MHz  
Gain Slope  
dB  
0.2 0.6 1.0 0.4 0.8 1.2 0.6 1.0 1.4 0.6 1.0 1.4  
f = 40 to 870 MHz  
Gf  
Gain Flatness  
dB  
–
–
0.6  
–
–
0.6  
–
–
0.6  
–
–
0.6  
40 to 870 MHz;  
Peak to Valley  
NF  
Noise Figure 1  
Noise Figure 2  
Input Return Loss  
dB  
dB  
–
–
–
–
–
–
–
–
–
–
–
6.5  
7.0  
–
–
–
–
–
–
–
–
–
–
–
–
6.0  
6.5  
–
–
–
–
–
–
–
–
–
–
–
–
5.5  
6.0  
–
–
–
–
–
–
–
–
–
–
–
–
5.0  
5.5  
–
f = 50 MHz  
–
–
–
–
f = 870 MHz  
RLi  
20.0  
19.0  
17.5  
16.0  
20.0  
19.0  
17.5  
16.0  
20.0  
19.0  
17.5  
16.0  
20.0  
20.0  
19.0  
18.0  
20.0  
20.0  
19.0  
17.0  
20.0  
20.0  
19.0  
18.0  
20.0  
20.0  
19.0  
17.0  
20.0  
20.0  
19.0  
18.0  
40 to 160MHz  
–
–
–
–
160 to 320 MHz  
320 to 640 MHz  
640 to 870 MHz  
40 to 160MHz  
–
–
–
–
–
–
–
–
RLo  
Output Return Loss  
dB  
–
–
–
–
–
–
–
–
160 to 320 MHz  
320 to 640 MHz  
640 to 870 MHz  
continued on next page  
–
–
–
–
–
–
–
–
12

中文翻译

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