Datasheet > 肖特基二极管> MBR2035CT

MBR2035CT

更新时间： 2024-01-14 08:34:44

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管局域网
页数	文件大小	规格书
2页	245K
描述
20.0AMP. Schottky Barrier Rectifiers

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中文翻译

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技术参数
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MBR2035CT 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
Is Samacsys：	N	Base Number Matches：	1

MBR2035CT 数据手册

MBR2035CT-MBR20150CT

20.0AMP. Schottky Barrier Rectifiers

TO-220AB

Features

ꢀ

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

ꢀ

260 C/10 seconds,0.25”(6.35mm)from case

Mechanical Data

ꢀ

Cases: JEDEC TO-220AB molded plastic

Polarity: As marked

Dimensions in inches and (millimeters)

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR MBR MBR MBR MBR MBR MBR

Symbol

Units

Type Number

2035 2045 2050 2060 2090 20100 20150

100

150

105

150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

I_(AV)

I_FRM

at T =135 C

Peak Repetitive Forward Current (Rated V , Square Wave,

20KHz) at Tc=135 C

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method )

Peak Repetitive Reverse Surge Current (Note 1)

150

I_FSM

I_RRM

1.0

0.5

Maximum Instantaneous Forward Voltage at (Note 2)

IF=10A, TC=25 C

0.80

0.70

0.95

0.85

0.75

0.95

0.85

0.99

0.87

1.23

1.10

IF=10A, TC=125 C

0.57

0.84

0.72

V_F

IF=20A, TC=25 C

IF=20A, TC=125 C

Maximum Instantaneous Reverse Current @ Tc=25℃

0.1

I_R

at Rated DC Blocking Voltage

@ Tc=125℃

5.0

Voltage Rate of Change, (Rated V )

10,000

V/uS

dV/dt

Typical Junction Capacitance

400

320

Typical Thermal Resistance Per Leg (Note 3)

1.0

2.0

C/W

θJC

Operating Junction Temperature Range

Storage Temperature Range

-65 to +150

-65 to +175

T_J

TSTG

Notes:

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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与MBR2035CT相关器件

型号	品牌	获取价格	描述	数据表
MBR2035CT/45-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR2035CT_08	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBR2035CT_1	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers
MBR2035CT_10	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers
MBR2035CT_11	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers
MBR2035CT_13	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency
MBR2035CT-017PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, 3 PIN
MBR2035CT-029PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, 3 PIN
MBR2035CT-1	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBR2035CT-1-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, TO-262AA, GREEN, PLASTIC, TO-

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