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MBR1040CT PDF预览

MBR1040CT

更新时间: 2024-02-16 02:57:10
品牌 Logo 应用领域
SSC 二极管测试局域网
页数 文件大小 规格书
2页 153K
描述
Schottky Barrier Recitifier

MBR1040CT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR1040CT 数据手册

 浏览型号MBR1040CT的Datasheet PDF文件第2页 
MBR1030CT-MBR1060CT  
Schottky Barrier Recitifier  
PRODUCT SUMMARY  
TO-220  
TO-220 Plastic-Encapsulate Transistors  
1. ANODE  
FEATURES  
2. CATHODE  
Scottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss, High Efficiency  
3. ANODE  
1 2 3  
Very low forward voltage drop  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For use in low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
1
2
3
Pb-free; RoHS-compliant  
ELECTRICAL CHARACTERISTICS  
( Tamb = 25oC unless otherwise specified )  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
24.5  
31.5  
V
A
PMS Reverse Voltage  
Average Rectified Output Current  
10  
125  
1.0  
(Note 1)  
@ TC=105  
Non-Repetitive Peak Forward Surge Current  
IFSM  
IRRM  
VFM  
IRM  
A
A
8.3ms Single half sine-wave superimposed on  
rated load  
(JEDEC Method)  
Repetitive Peak Reverse Surge Current  
@ t2.0µs  
0.57  
0.70  
0.80  
0.95  
Forward Voltage Drop  
@ IF=5.0A, TC=125℃  
0.70  
0.84  
V
@ IF=5.0A, TC= 25℃  
@ IF=10A, TC= 25℃  
@ TC= 25℃  
0.1  
15  
Peak Reverse Current  
mA  
at Rated DC Blocking Voltage  
@ TC=125℃  
Cj  
150  
pF  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes: 1. Thermal resistance junction to case mounted heat sink.  
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.  
01/29/2007 Rev.1.00  
www.SiliconStandard.com  
1

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