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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11139-1E
MEMORY
Un-buffered
8 M × 64 BIT
SYNCHRONOUS DYNAMIC RAM DIMM
MB8508S064CZ-102/-103/-102L/-103L
168-pin, 4 Clock, 1-bank, based on 8 M × 8 Bit SDRAMs with SPD
■ DESCRIPTION
TheFujitsuMB8508S064CZisafullydecoded, CMOSSynchronousDynamicRandomAccessMemory(SDRAM)
Module consisting of eight MB81F64842C devices which organized as four banks of 8 M × 8 bits and a 2K-bit
serial EEPROM on a 168-pin glass-epoxy substrate.
The MB8508S064CZ features a fully synchronous operation referenced to a positive edge clock whereby all
operations are synchronized at a clock input which enables high performance and simple user interface
coexistence.
The MB8508S064CZ is optimized for those applications requiring high speed, high performance and large
memory storage, and high density memory organizations.
This module is ideally suited for workstations, PCs, laser printers, and other applications where a simple interface
is needed.
■ PRODUCT LINE & FEATURES
Parameter
MB8508S064CZ-102/-102L
2-2-2 clk min.
MB8508S064CZ-103/-103L
3-2-2 clk min.
CL-tRCD-tRP
Clock Frequency
100 MHz max.
100 MHz max.
Burst Mode Cycle Time
Output Valid from Clock
10 ns min.
10 ns min.
6 ns max. (CL = 2)
5472 mW max.
6 ns max. (CL = 3)
5472 mW max.
Two Banks Active
Self Refresh Mode
Power Dissipation
28.8 mW max. (Std. power)
14.4 mW max. (Low power)
28.8 mW max. (Std. power)
14.4 mW max. (Low power)
• Un-buffered 168-pin DIMM Socket Type
(Lead pitch: 1.27 mm)
• Conformed to JEDEC Standard (4 CLK)
• Organization: 8,388,608 words × 64 bits
• Memory: MB81F64842C (8 M × 8, 4-bank) × 8 pcs
• 3.3 V ±0.3 V Supply Voltage
• 4096 Refresh Cycle every 65.6 ms
• Auto and Self Refresh
• CKE Power Down Mode
• DQM Byte Masking (Read/Write)
• Serial Presence Detect (SPD) with Serial EEPROM:
Intel SPD spec Rev 1.2A Format
• All input/output LVTTL compatible
• Conformed to Intel PC/100 spec
• Module size:
1.375” (height) × 5.25” (length) × 0.157” (thickness)