Low-Noise, Fibre Channel Transimpedance
Amplifiers
ELECTRICAL CHARACTERISTICS (continued)
(V
= +3.0V to +3.6V, T = 0°C to +85°C. Typical values are at V
= +3.3V, source capacitance (C ) = 0.85pF, T = +25°C,
CC
A
CC IN A
unless otherwise noted.) (Notes 1, 2)
Note 1: Die parameters are production tested at room temperature only, but are guaranteed by design and characterization from
0°C to +85°C.
Note 2: Source capacitance represents the total capacitance at the IN pad during characterization of the noise and bandwidth
parameters.
Note 3: Guaranteed by design and characterization.
Note 4: Measured using an RF-power meter with no pattern applied at the input. The TIA output is bandwidth limited for
measurement using a 4th-order Bessel Thompson filter. The -3dB frequency of the filter matches the frequency (0.8GHz,
1.6GHz, or 2.1GHz) for the specified noise BW.
Note 5: DC offset and deterministic jitter may exceed specification if AC or DC overload conditions are exceeded.
✕
Note 6: Using fibre channel K28.5 pattern. The input bandwidth is limited to 0.75 (2.125Gbps) by a 4th-order Bessel Thompson
filter. Measured differentially across an AC-coupled 100Ω external load.
Note 7: K28.5 pattern: (00111110101100000101).
Note 8: Gain may vary 5% relative to reference measured with 30µA
input.
P-P
Note 9: Production tested with 1mA
input.
P-P
Note 10: Using a K28.7 (0011111000) pattern. Measured differentially across an AC-coupled 100Ω external load.
Note 11: Power-supply rejection PSR = -20log(∆V /∆V ), where ∆V is the differential output voltage and ∆V is the noise
CC
OUT
CC
OUT
on V
.
CC
Typical Operating Characteristics
(V
= +3.3V, C = 0.85pF, T = +25°C, unless otherwise noted.)
IN A
CC
INPUT-REFERRED NOISE
vs. TEMPERATURE
INPUT-REFERRED NOISE
vs. TEMPERATURE
FREQUENCY RESPONSE
250
240
230
220
210
200
190
180
170
160
150
350
C
IS SOURCE CAPACITANCE
C
IS SOURCE CAPACITANCE
340
330
320
310
300
290
280
270
260
250
240
230
220
210
200
IN
71
69
67
IN
PRESENTED TO DIE, INCLUDING
PIN DIODE, AND PARASITIC
INTERCONNECT CAPACITANCE
PRESENTED TO DIE, INCLUDING
PIN DIODE, AND PARASITIC
INTERCONNECT CAPACITANCE
C
= 0.85pF
IN
C
= 0.85pF
65
63
IN
C
= 0.6pF
C
= 0.6pF
IN
IN
61
59
57
BW = 1.6GHz
80
BW = 0.8GHz
80 100
0
20
40
60
100
0
20
40
60
100M
1G
10G
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
FREQUENCY (Hz)
_______________________________________________________________________________________
3