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MAX2390

更新时间: 2024-11-20 01:06:15
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描述
W-CDMA/W-TDD/TD-SCDMA Zero-IF Receivers

MAX2390 数据手册

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19-2754; Rev 2; 11/05  
W-CDMA/W-TDD/TD-SCDMA Zero-IF Receivers  
General Description  
Features  
Fully Monolithic Direct-Conversion Receivers  
The MAX2390–MAX2393/MAX2396/MAX2400/MAX2401  
(referred to as the “MAX2390 family”) fully integrated  
direct-conversion receiver ICs are designed for W-CDMA  
and TD-SCDMA applications.  
Eliminate External IF SAW + IF AGC + I/Q Demod  
Meet all 3GPP Receiver’s Standard Requirements  
with at Least 3dB Margin on Eb/No  
The MAX2390 family of receiver ICs have over 90dB of  
dynamic gain control, and typical noise figure of 2.7dB  
referred to LNA input. Each receiver consists of an ultra-  
low-current low-noise amplifier (LNA) with on-chip output  
matching and a two-step gain control. The zero-IF  
demodulator has a differential circuit topology for mini-  
mum LO leakage to receiver’s input. The channel selec-  
tivity is done completely in the baseband section of the  
receiver with an on-chip lowpass filter. The AGC section  
has over 50dB of gain-control range. LO quadrature  
generation is done on-chip through a divide-by-2  
prescaler. The DC offset cancellation in the I/Q baseband  
channels is done fully on-chip using a DC servo loop. To  
quickly correct for large DC offset transients in minimal  
time, very fast settling time is obtained by optimization of  
the DC-offset-cancellation circuit’s time constant.  
Operate from a +2.7V to +3.3V Single Supply  
Over 90dB of RF+ Baseband Gain-Control Range  
Channel Selectivity Over 40dB  
Receiver Current Consumption 32mA  
On-Chip DC Offset Cancellation  
Compatible with Various CMOS Logic Levels  
Pin Configurations/  
Functional Diagrams  
28  
27  
26  
25  
24  
23  
22  
SERIAL  
INTERFACE  
V
1
2
3
4
5
6
7
21 Q-  
CC  
The MAX2390 family includes a 3-wire serial bus for con-  
figuring the different receiver modes. They also include a  
SHDN pin for full device shutdown. The receivers are  
fabricated using an advanced high-frequency SiGe  
BiCMOS process. The ICs operate from a single +2.7V to  
+3.3V supply and are housed in a small 28-pin leadless  
QFN-EP and thin QFN-EP packages (5mm x 5mm).  
RF+  
RF-  
20  
Q+  
19 AGC  
BIAS  
18 SHDN  
V
CC  
LD  
17  
16  
15  
MAX2390–MAX2393/  
MAX2401  
/2  
G_LNA  
REFIN  
Applications  
INTEGER-N  
PLL  
TANK  
12  
LNA_OUT  
LNA  
V
CC  
IMT2000 Handsets  
UMTS Handsets  
TD-SCDMA Handsets  
W-CDMA TDD Handsets  
8
9
10  
11  
13  
14  
W-CDMA Band II (PCS)  
Handsets  
W-CDMA Band III (DCS)  
Handsets  
Pin Configurations continued at end of data sheet.  
Ordering Information/Selector Guide  
PART  
TEMP RANGE  
PIN-PACKAGE  
-40°C to +85°C 28 Thin QFN-EP*  
-40°C to +85°C 28 Thin QFN-EP*  
APPLICATION  
CHIP RATE (Mcps) RF BAND (MHz) SYNTHESIZER  
W-CDMA Band II  
MAX2390ETI  
MAX2391ETI  
3.84  
3.84  
1930 to 1990  
2110 to 2170  
2110 to 2170  
2010 to 2025  
2010 to 2025  
1900 to 1920  
2110 to 2170  
1930 to 1990  
1805 to 1880  
1805 to 1880  
On-Chip  
On-Chip  
On-Chip  
On-Chip  
On-Chip  
On-Chip  
External  
External  
On-Chip  
On-Chip  
IMT2000/UMTS  
IMT2000/UMTS  
TD-SCDMA  
MAX2391ETI+ -40°C to +85°C 28 Thin QFN-EP*  
MAX2392ETI -40°C to +85°C 28 Thin QFN-EP*  
MAX2392ETI+ -40°C to +85°C 28 Thin QFN-EP*  
3.84  
1.28  
TD-SCDMA  
1.28  
MAX2393EGI -40°C to +85°C  
MAX2396EGI -40°C to +85°C  
28 QFN-EP*  
28 QFN-EP*  
W-TDD/TD-SCDMA  
IMT2000/UMTS  
W-CDMA Band II  
W-CDMA Band III  
W-CDMA Band III  
3.84 or 1.28  
3.84  
MAX2400ETI  
MAX2401ETI  
-40°C to +85°C 28 Thin QFN-EP*  
-40°C to +85°C 28 Thin QFN-EP*  
3.84  
3.84  
MAX2401ETI+ -40°C to +85°C 28 Thin QFN-EP*  
2.84  
*EP = Exposed paddle. + Denotes lead-free package.  
________________________________________________________________ Maxim Integrated Products  
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at  
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.  

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