Datasheet > MAR9264T70CB

MAR9264T70CB

更新时间： 2024-01-28 16:16:51

品牌	Logo	应用领域
DYNEX		静态存储器
页数	文件大小	规格书
15页	238K
描述
SRAM

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技术参数
数据手册

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MAR9264T70CB 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.46
Base Number Matches：	1

MAR9264T70CB 数据手册

MA9264

Radiation Hard 8192x8 Bit Static RAM

Replaces June 1999 version, DS3692-6.0

DS3692-7.0 January 2000

The MA9264 64k Static RAM is configured as 8192x8 bits and

manufactured using CMOS-SOS high performance, radiation hard,

1.5µm technology.

Thedesignusesa6transistorcellandhasfullstaticoperationwith

noclockortimingstroberequired.Addressinputbuffersaredeselected

when chip select is in the HIGH state.

FEATURES

■ 1.5µm CMOS-SOS Technology

■ Latch-up Free

■ Fast Access Time 70ns Typical

■ Total Dose 10⁶Rad(Si)

■ Transient Upset >10¹¹Rad(Si)/sec

■ SEU 4.3 x 10^-11Errors/bitday

■ Single 5V Supply

See Application Note “Overview of the Dynex Semiconductor

Radiation Hard 1.5µm CMOS/SOS SRAM Range”.

Operation Mode CS CE OE WE

I/O

Power

■ Three State Output

Read

Write

D OUT

D IN

■ Low Standby Current 100µA Typical

■ -55°C to +125°C Operation

ISB1

ISB2

■ All Inputs and Outputs Fully TTL or CMOS

Output Disable

High Z

Compatible

Standby

High Z

■ Fully Static Operation

Figure 1: Truth Table

A12

A10 A0 A1 A2 A11

Figure 2: Block Diagram

1/15

12 3 4 5 6 7...15

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