5秒后页面跳转
MA5J002E PDF预览

MA5J002E

更新时间: 2024-02-08 04:22:42
品牌 Logo 应用领域
松下 - PANASONIC 开关
页数 文件大小 规格书
3页 80K
描述
Silicon epitaxial planar type For high speed switching circuits

MA5J002E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.82配置:COMMON CATHODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):12 VJESD-30 代码:R-PDSO-F5
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:4
端子数量:5最高工作温度:105 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:80 V最大反向恢复时间:0.003 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MA5J002E 数据手册

 浏览型号MA5J002E的Datasheet PDF文件第2页浏览型号MA5J002E的Datasheet PDF文件第3页 
Switching Diodes  
MA5J002E  
Silicon epitaxial planar type  
Unit: mm  
2.0 0.1  
(0.65) (0.65)  
5
For high speed switching circuits  
0.7 0.1  
4
3
Features  
Includes 4 elements of cathode common connection  
Parts reduction is possible  
Ideal for surge voltage absorption  
1
2
0.2 0.05  
+0.1  
0.16  
–0.06  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
Maximum peak reverse voltage  
VRM  
IF  
80  
V
1
1: Anode 1  
2: Cathode 1, 2, 3, 4  
3: Anode 2  
4: Anode 3  
5: Anode 4  
Forward current *  
100  
225  
500  
mA  
mA  
mA  
1
Peak forward current *  
IFM  
SMini5-F 1 Package  
Non-repetitive peak forward  
IFSM  
1,  
2
surge current *  
Marking Symbol: M5B  
Junction temperature  
Tj  
150  
°C  
°C  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
25 to +105  
55 to +150  
Internal Connection  
5
4
Note) 1: Value in single diode used.  
*
2: t = 1 s  
*
1
2
3
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Forward voltage  
Symbol  
Conditions  
IF = 100 mA  
Min  
Typ  
Max  
Unit  
V
VF  
VR  
IR  
1.2  
Reverse voltage  
IR = 100 µA  
VR = 75 V  
80  
V
Reverse current  
100  
2
nA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
trr  
VR = 0 V, f = 1 MHz  
IF = 10 mA, VR = 6 V  
3
Irr = 0.1 IR , RL = 100 Ω  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.  
2. Absolute frequency of input and output is 100 MHz.  
3. : trr measurement circuit  
*
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
VR = 6 V  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Publication date: November 2003  
SKF00061BED  
1

与MA5J002E相关器件

型号 品牌 获取价格 描述 数据表
MA5KP10/TR8 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 10V V(RWM), Unidirectional,
MA5KP100A/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MA5KP100AE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MA5KP100AE3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MA5KP100AE3TR MICROSEMI

获取价格

5000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 P
MA5KP100ATR MICROSEMI

获取价格

5000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR, PLASTIC, CASE 5A, 2 PIN
MA5KP100ATRE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
MA5KP100C MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MA5KP100CA MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MA5KP100CA/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-