Datasheet > M95512-DRMB3TP/K

M95512-DRMB3TP/K

更新时间： 2023-01-02 17:01:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
39页	530K
描述
64KX8 SPI BUS SERIAL EEPROM, PDSO8, 2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, UFDFP-8

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中文翻译

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数据手册

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M95512-DRMB3TP/K 数据手册

M95512-A125

M95512-A145

Automotive 512-Kbit serial SPI bus EEPROMs

with high-speed clock

Target specification

Features

■ Compatible with the Serial Peripheral Interface

(SPI) bus

■ Memory array

SO8 (MN)

150 mil width

– 512 Kbits (64 Kbytes) of EEPROM

– Page size: 128 bytes

– Write protection by block: 1/4, 1/2 or whole

memory

– Additional Write lockable Page

(Identification page)

TSSOP8 (DW)

169 mil width

■ Extended temperature and voltage ranges

– Up to 125 °C: 1.8 V to 5.5 V

– Up to 145 °C: 2.5 V to 5.5 V

■ High speed clock frequency

– 20 MHz for V

– 10 MHz for V

4.5 V

2.5 V

CC ≥

– 5 MHz for V

1.8 V

CC ≥

UFDFPN8 (MC)

2 x 3 mm

■ Schmitt trigger inputs for noise filtering

■ Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

■ Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 600 k Write cycles at 125 °C

– 400 k Write cycles at 145 °C

■ Data retention

– 40 years at 55 °C

– 100 years at 25 °C

■ ESD Protection (Human Body Model)

– 4000 V

■ Packages

– RoHS-compliant and halogen-free

(ECOPACK2 )

February 2012

Doc ID 022682 Rev 1

1/39

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.st.com

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