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M93S46-DS3TP

更新时间： 2024-01-05 15:15:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
34页 526K
描述
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

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M93S46-DS3TP 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：compliant
风险等级：5.84数据保留时间-最小值：40
耐久性：1000000 Write/Erase CyclesJESD-30 代码：R-PDSO-G8
JESD-609代码：e3内存密度：1024 bit
内存集成电路类型：EEPROM内存宽度：16
湿度敏感等级：1端子数量：8
字数：64 words字数代码：64
最高工作温度：125 °C最低工作温度：-40 °C
组织：64X16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP8,.19
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：SERIAL峰值回流温度（摄氏度）：225
电源：5 V认证状态：Not Qualified
串行总线类型：MICROWIRE最大待机电流：0.00001 A
子类别：EEPROMs最大压摆率：0.002 mA
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.635 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED写保护：HARDWARE/SOFTWARE
Base Number Matches：1

M93S46-DS3TP 数据手册

 浏览型号M93S46-DS3TP的Datasheet PDF文件第2页浏览型号M93S46-DS3TP的Datasheet PDF文件第3页浏览型号M93S46-DS3TP的Datasheet PDF文件第4页浏览型号M93S46-DS3TP的Datasheet PDF文件第6页浏览型号M93S46-DS3TP的Datasheet PDF文件第7页浏览型号M93S46-DS3TP的Datasheet PDF文件第8页 
M93S66, M93S56, M93S46  
An internal Power-on Data Protection mechanism  
in the M93Sx6 inhibits the device when the supply  
is too low.  
INSTRUCTIONS  
The instruction set of the M93Sx6 devices con-  
tains seven instructions, as summarized in Table  
2. to Table 3.. Each instruction consists of the fol-  
lowing parts, as shown in Figure 4.:  
■
■
■
Each instruction is preceded by a rising edge  
on Chip Select Input (S) with Serial Clock (C)  
being held Low.  
A start bit, which is the first ‘1’ read on Serial  
Data Input (D) during the rising edge of Serial  
Clock (C).  
Two op-code bits, read on Serial Data Input  
(D) during the rising edge of Serial Clock (C).  
(Some instructions also use the first two bits of  
the address to define the op-code).  
POWER-ON DATA PROTECTION  
To prevent data corruption and inadvertent write  
operations during power-up, a Power-On Reset  
(POR) circuit resets all internal programming cir-  
cuitry, and sets the device in the Write Disable  
mode.  
–
At Power-up and Power-down, the device  
must not be selected (that is, Chip Select Input  
(S) must be driven Low) until the supply  
voltage reaches the operating value V  
specified in Table 5. to Table 6..  
CC  
■
The address bits of the byte or word that is to  
be accessed. For the M93S46, the address is  
made up of 6 bits (see Table 2.). For the  
M93S56 and M93S66, the address is made up  
of 8 bits (see Table 3.).  
–
When V reaches its valid level, the device is  
CC  
properly reset (in the Write Disable mode) and  
is ready to decode and execute incoming  
instructions.  
The M93Sx6 devices are fabricated in CMOS  
technology and are therefore able to run as slow  
as 0 Hz (static input signals) or as fast as the max-  
imum ratings specified in Table 16. to Table 19..  
For the M93Sx6 devices (5V range) the POR  
threshold voltage is around 3V. For the M93Sx6-  
W (3V range) and M93Sx6-R (2V range) the POR  
threshold voltage is around 1.5V.  
5/34  
12345678...34

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与M93S46-DS3TP相关器件

型号 品牌 描述 获取价格 数据表
M93S46-DS3TP/W STMICROELECTRONICS IC,SERIAL EEPROM,64X16,CMOS,TSSOP,8PIN,PLASTIC

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M93S46-DS6T STMICROELECTRONICS 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

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M93S46-DS6TG STMICROELECTRONICS 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

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