Datasheet > M6MGT64BM34CWG-P

M6MGT64BM34CWG-P

更新时间： 2024-01-01 03:37:14

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
3页	118K
描述
M6MGT64BM34CWG-P

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技术参数
数据手册

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M6MGT64BM34CWG-P 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

M6MGT64BM34CWG-P 数据手册

Renesas LSIs

M6MGB/T64BM34CWG-P

67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY

33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

Stacked-CSP ( Chip Scale Package)

MCP Block Diagram

F-Vcc

F-GND

A0 to A21

F-RY/BY#

A0 to A21

F-CE#

F-WP#

F-RP#

F-WE#

F-OE#

64Mbit DINOR IV

Flash Memory

M-GND

M-Vcc

DQ0 to DQ15

A0 to A20

M-WE#

M-OE#

M-UB#

M-LB#

M-CE#

32Mbit

Mobile RAM

Note: In the data sheet there are “VCC”s , “GND”s , “OE”s and “WE”s.

In the Flash Memory part they mean F-Vcc, F-GND, F-OE# and F-WE#.

In the Mobile RAM part they mean M-Vcc, M-GND, M-OE# and M-WE#.

In the Mobile RAM part UB# and LB# are M-UB# and M-LB#, respectively.

Capacitance

Limits

Typ.

Symbol

Parameter

Conditions

Unit

Min.

Max.

Input

capacitance

Output

A21-A0, F-OE#, F-WE#, F-CE#, F-WP#, F-

RP#, M-CE#, M-OE#, M-WE#, M-LB#, M-UB#

CIN

Ta=25°C, f=1MHz,

Vin=Vout=0V

COUT

DQ15-DQ0, F-RY/BY#

Capacitance

Rev.1.0.48a_bezc

123

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