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M5M51016BVP-70LL PDF预览

M5M51016BVP-70LL

更新时间: 2023-01-02 18:54:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
1页 94K
描述
Standard SRAM, 64KX16, 70ns, CMOS, PDSO40

M5M51016BVP-70LL 技术参数

生命周期:Obsolete包装说明:TSOP1,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.82
最长访问时间:70 nsJESD-30 代码:R-PDSO-G40
长度:12.4 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:40
字数:65536 words字数代码:64000
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm表面贴装:YES
技术:CMOS端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
宽度:10 mm

M5M51016BVP-70LL 数据手册

  

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1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM