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M58LV064B150ZA6T PDF预览

M58LV064B150ZA6T

更新时间: 2024-01-10 18:40:28
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
65页 376K
描述
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80

M58LV064B150ZA6T 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:BGA包装说明:10 X 13 MM, 1 MM PITCH, TBGA-80
针数:80Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.52Is Samacsys:N
最长访问时间:150 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
备用内存宽度:16命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B80JESD-609代码:e1
长度:13 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:32
功能数量:1部门数/规模:64
端子数量:80字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX32封装主体材料:PLASTIC/EPOXY
封装代码:TBGA封装等效代码:BGA80,8X10,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE
页面大小:2/4 words并行/串行:PARALLEL
电源:2/3.3,3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:1M
最大待机电流:0.000001 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM切换位:NO
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M58LV064B150ZA6T 数据手册

 浏览型号M58LV064B150ZA6T的Datasheet PDF文件第2页浏览型号M58LV064B150ZA6T的Datasheet PDF文件第3页浏览型号M58LV064B150ZA6T的Datasheet PDF文件第4页浏览型号M58LV064B150ZA6T的Datasheet PDF文件第5页浏览型号M58LV064B150ZA6T的Datasheet PDF文件第6页浏览型号M58LV064B150ZA6T的Datasheet PDF文件第7页 
M58LV064A  
M58LV064B  
64 Mbit (4Mb x16 or 2Mb x32, Uniform Block, Burst)  
3V Supply Flash Memories  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE DATA BUS for HIGH BANDWIDTH  
Figure 1. Packages  
– M58LV064A: x16  
– M58LV064B: x16/x32  
SUPPLY VOLTAGE  
– V = 3.0 to 3.6V M58LV064 core supply  
DD  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
TSOP56 (N)  
14 x 20mm  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
– Pipelined Synchronous Burst Read  
– Asynchronous Random Read  
TBGA  
– Asynchronous Address Latch Controlled  
Read  
– Page Read  
TBGA64 (ZA)  
10 x 13mm  
ACCESS TIME  
– Synchronous Burst Read up to 66MHz  
– Asynchronous Page Mode Read 150/25ns  
– Random Read 150ns  
TBGA  
PROGRAMMING TIME  
– 16 Word or 8 Double-Word Write Buffer  
– 12 s Word effective programming time  
64 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
OTP SECURITY AREA  
TBGA80 (ZA)  
10 x13mm  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LV064A: 0015h  
– Device Code M58LV064B: 0014h  
December 2002  
1/65  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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