Datasheet > M58LT256JSB

M58LT256JSB

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
106页	839K
描述
256 Mbit (16 Mb 】 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories

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M58LT256JSB 数据手册

M58LT256JST

M58LT256JSB

256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)

1.8 V supply, secure Flash memories

Features

■ Supply voltage

– V = 1.7 V to 2.0 V for program, erase

and read

– V

= 2.7 V to 3.6 V for I/O Buffers

DDQ

BGA

– V = 9 V for fast program

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 52 MHz

– Random access: 85 ns

TBGA64 (ZA)

10 x 13 mm

– Asynchronous Page Read mode

■ Synchronous Burst Read Suspend

■ Programming time

– 5 µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Electronic signature

– Manufacturer Code: 20h

– Top Device Codes:

M58LT256JST: 885Eh

■ Memory organization

– Multiple Bank memory array: 16 Mbit banks

– Parameter Blocks (top or bottom location)

– Bottom Device Codes

M58LT256JSB: 885Fh

■ Dual operations

■ TBGA64 package

– program/erase in one Bank while read in

others

– ECOPACK® compliant

– No delay between read and write

operations

■ Block protection

– All blocks protected at Power-up

– Any combination of blocks can be protected

with zero latency

– Absolute Write Protection with V = V

■ Security

– Software security features

– 64 bit unique device number

– 2112 bit user programmable OTP Cells

■ Common Flash Interface (CFI)

■ 100 000 program/erase cycles per block

June 2007

Rev 2

1/106

www.st.com

12 3 4 5 6 7...106

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