是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | BGA | 包装说明: | 10 X 13 MM, 1 MM PITCH, TBGA-64 |
针数: | 64 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.52 | Is Samacsys: | N |
最长访问时间: | 150 ns | 其他特性: | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B64 |
JESD-609代码: | e1 | 长度: | 13 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
部门数/规模: | 64 | 端子数量: | 64 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TBGA |
封装等效代码: | BGA64,8X8,40 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 页面大小: | 4 words |
并行/串行: | PARALLEL | 电源: | 2/3.3,3.3 V |
编程电压: | 3 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 座面最大高度: | 1.2 mm |
部门规模: | 1M | 最大待机电流: | 0.000001 A |
子类别: | Flash Memories | 最大压摆率: | 0.05 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
切换位: | NO | 类型: | NOR TYPE |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
M58LV064A150ZA1T | STMICROELECTRONICS | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
获取价格 |
|
M58LV064A150ZA1T | NUMONYX | Flash, 4MX16, 150ns, PBGA64, 10 X 13 MM, 1 MM PITCH, TBGA-64 |
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|
M58LV064A150ZA6 | NUMONYX | Flash, 4MX16, 150ns, PBGA64, 10 X 13 MM, 1 MM PITCH, TBGA-64 |
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|
M58LV064A150ZA6T | STMICROELECTRONICS | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
获取价格 |
|
M58LV064A150ZA6T | NUMONYX | Flash, 4MX16, 150ns, PBGA64, 10 X 13 MM, 1 MM PITCH, TBGA-64 |
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|
M58LV064B | STMICROELECTRONICS | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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