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M4N25 PDF预览

M4N25

更新时间: 2024-01-24 07:58:09
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
8页 143K
描述
6-Pin DIP Optoisolators Transistor Output

M4N25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, DIP-6Reach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.92
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
当前传输比率-最小值:20%标称电流传输比:70%
最大暗电源:50 nA最大正向电流:0.06 A
最大正向电压:1.5 V最大绝缘电压:7500 V
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.05 A
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.25 W
子类别:Optocoupler - Transistor Outputs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

M4N25 数据手册

 浏览型号M4N25的Datasheet PDF文件第2页浏览型号M4N25的Datasheet PDF文件第3页浏览型号M4N25的Datasheet PDF文件第4页浏览型号M4N25的Datasheet PDF文件第5页浏览型号M4N25的Datasheet PDF文件第6页浏览型号M4N25的Datasheet PDF文件第7页 
Order this document  
by M4N25/D  
SEMICONDUCTOR TECHNICAL DATA  
STYLE 1 PLASTIC  
The M4N25 device consists of a gallium arsenide infrared emitting diode  
optically coupled to a silicon NPN phototransistor detector.  
Most Economical Optoisolator Choice for Medium Speed, Switching Applications  
Meets or Exceeds All JEDEC Registered Specifications  
6
Applications  
1
General Purpose Switching Circuits  
Interfacing and coupling systems of different potentials and impedances  
I/O Interfacing  
STANDARD THRU HOLE  
SCHEMATIC  
Solid State Relays  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
1
2
3
6
Rating  
Symbol  
Value  
Unit  
5
4
INPUT LED  
Reverse Voltage  
V
R
3
Volts  
mA  
Forward Current — Continuous  
I
F
60  
PIN 1. LED ANODE  
2. LED CATHODE  
3. N.C.  
LED Power Dissipation @ T = 25°C  
P
D
100  
mW  
A
with Negligible Power in Output Detector  
4. EMITTER  
Derate above 25°C  
1.41  
mW/°C  
5. COLLECTOR  
6. BASE  
OUTPUT TRANSISTOR  
Collector–Emitter Voltage  
Emitter–Collector Voltage  
Collector–Base Voltage  
V
V
V
30  
7
Volts  
Volts  
Volts  
mA  
CEO  
ECO  
CBO  
70  
50  
150  
Collector Current — Continuous  
I
C
Detector Power Dissipation @ T = 25°C  
with Negligible Power in Input LED  
P
D
mW  
A
Derate above 25°C  
1.76  
mW/°C  
TOTAL DEVICE  
(1)  
Isolation Surge Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
(2)  
Ambient Operating Temperature Range  
T
55 to +100  
55 to +150  
260  
°C  
°C  
°C  
A
(2)  
Storage Temperature Range  
T
stg  
Soldering Temperature (10 sec, 1/16from case)  
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.  
Motorola, Inc. 1997  

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