是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 8 X 14 MM, 0.80 MM PITCH, STACK, LFBGA-96 |
针数: | 96 | Reach Compliance Code: | not_compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.92 |
最长访问时间: | 85 ns | 其他特性: | SRAM ORGANISATION IS 512K X 16 |
JESD-30 代码: | R-PBGA-B96 | JESD-609代码: | e0 |
长度: | 14 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
混合内存类型: | FLASH+SRAM | 功能数量: | 1 |
端子数量: | 96 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装等效代码: | BGA96,8X14,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.8/2,3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
最大待机电流: | 0.00002 A | 子类别: | Other Memory ICs |
最大压摆率: | 0.035 mA | 最大供电电压 (Vsup): | 2.2 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M36WT864TF85ZA6T | STMICROELECTRONICS |
获取价格 |
SPECIALTY MEMORY CIRCUIT, PBGA96, 8 X 14 MM, 0.80 MM PITCH, STACK, LFBGA-96 | |
M36WT864TFZA | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WT8B10ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WT8B70ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WT8B85ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WV864B10ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WV864B70ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WV864B85ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WV864T10ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo | |
M36WV864T70ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memo |