Datasheet > 存储 > DRAM> M366S3323DTS-L7C

M366S3323DTS-L7C

更新时间： 2024-02-19 10:27:46

品牌	Logo	应用领域
三星 - SAMSUNG		光电二极管动态存储器
页数	文件大小	规格书
11页	172K
描述
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

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M366S3323DTS-L7C 数据手册

PC133/PC100 Unbuffered DIMM

M366S3323DTS

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to Vss

Voltage on VDD supply relative to Vss

Storage temperature

Symbol

VIN, VOUT

VDD, VDDQ

TSTG

Value

-1.0 ~ 4.6

-55 ~ +150

Unit

°C

Power dissipation

Short circuit current

IOS

Note :

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)

Parameter

Supply voltage

Symbol

VDD, VDDQ

VIH

Min

3.0

2.0

-0.3

2.4

Typ

Max

Unit

Note

3.3

3.6

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

3.0

VDDQ+0.3

VIL

0.8

VOH

IOH = -2mA

IOL = 2mA

VOL

0.4

ILI

-10

Notes :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.

3. Any input 0V £ VIN £ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)

Symbol

Min

Max

Unit

Address (A0 ~ A11, BA0 ~ BA1)

RAS, CAS, WE

CADD

CIN

CKE (CKE0 ~ CKE1)

Clock (CLK0 ~ CLK3)

CS (CS0 ~ CS3)

CCKE

CCLK

CCS

DQM (DQM0 ~ DQM7)

DQ (DQ0 ~ DQ63)

CDQM

COUT

Rev. 0.1 Sept. 2001

1 2 345 6 7...11

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